Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
NSBC124XPDXV6T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563	In Stock447 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NSBC143TPDXV6T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563	In Stock435 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NSTB1002DXV5T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.5W SOT55	In Stock477 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 200mA	Voltage - Collector Emitter Breakdown (Max): 50V, 40V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-553	Supplier Device Package: SOT-553
NSTB1003DXV5T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT553	In Stock429 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: Surface Mount	Package / Case: SOT-553	Supplier Device Package: SOT-553
NSTB1004DXV5T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT553	In Stock256 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: Surface Mount	Package / Case: SOT-553	Supplier Device Package: SOT-553
NSVBC114YPDXV65G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563	In Stock676 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
EMF21-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT563	In Stock324 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA, 500mA	Voltage - Collector Emitter Breakdown (Max): 50V, 12V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz, 280MHz	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NSM21156DW6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT363	In Stock466 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V, 65V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
NSM21356DW6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT363	In Stock409 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V, 65V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 220 @ 2mA, 5V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
NSM46211DW6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN SOT363	In Stock534 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN Pre-Biased, 1 NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V, 65V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 200 @ 2mA, 5V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
UP04211G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI6	In Stock274 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
UP04213G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI6	In Stock493 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
UP04390G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6	In Stock559 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms, 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz, 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
NSB13211DW6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.23W SC88	In Stock513 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms, 10kOhms	Resistor - Emitter Base (R2): 4.7kOhms, 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
NSM11156DW6T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PNP PREBIAS/PNP 0.23W SC88	In Stock346 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 PNP Pre-Biased, 1 PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V, 65V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
UP01214G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI5	In Stock517 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-665	Supplier Device Package: SSMini5-F3
UP0121MG0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI5	In Stock433 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-665	Supplier Device Package: SSMini5-F3
UP04111G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SSMINI5	In Stock592 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini5-F3
UP0411MG0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SSMINI5	In Stock541 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini5-F3
UP04210G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI5	In Stock303 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini5-F3
UP04311G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6	In Stock328 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz, 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
UP04312G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6	In Stock461 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz, 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
UP04314G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6	In Stock435 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz, 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
UP0431NG0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6	In Stock325 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 150MHz, 80MHz	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F2
BCR108SH6433XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock354 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 170MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 116S E6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock544 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 116S H6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock239 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 133S H6444	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock194 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 10kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 141S E6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock142 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6
BCR 141S H6727	Infineon Technologies	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock274 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 130MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-VSSOP, SC-88, SOT-363	Supplier Device Package: PG-SOT363-6