Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 6/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 |
In Stock24,787 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 |
In Stock16,966 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: SMini6-F3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 |
In Stock4,083 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: SMini6-F3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 |
In Stock4,517 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: SMini6-F3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6 |
In Stock11,602 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini6-F3-B |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock4,996 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock4,248 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 |
In Stock13,167 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock4,832 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock14,943 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock4,523 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 700mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 60V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 500mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 185MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
In Stock4,187 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 700mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 300 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA, 100nA |
Frequency - Transition: 150MHz |
Power - Max: 600mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT6 |
In Stock3,992 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP |
In Stock4,160 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 300MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMT6 |
In Stock3,721 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: SMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT5 |
In Stock8,026 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: UMT5 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT6 |
In Stock3,913 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 |
In Stock14,091 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: EMT5 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 |
In Stock43,114 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 |
In Stock26,844 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: EMT5 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 |
In Stock10,892 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 |
In Stock14,138 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 |
In Stock7,190 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: SMini6-F3-B |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 |
In Stock10,183 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMT6 |
In Stock3,705 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: SMT6 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP |
In Stock4,267 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 2.2kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 300MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMT5 |
In Stock4,874 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74A, SOT-753 |
Supplier Device Package: SMT5 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP MINI5 |
In Stock3,739 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74A, SOT-753 |
Supplier Device Package: Mini5-G3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W MINI5 |
In Stock3,821 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SC-74A, SOT-753 |
Supplier Device Package: Mini5-G3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP MINI6 |
In Stock4,028 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: Mini6-G4-B |