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Bipolar (BJT) - Arrays

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays
Records 1,432
Page 32/48
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
HCT700
TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V/60V SMT

In Stock158

More on Order

Manufacturer: TT Electronics/Optek Technology
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 800mA, 600mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: -
JANTX2N3810
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A TO78

In Stock567

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JAN2N3810L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A TO78

In Stock422

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N4854UTX
TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 0.6A 6CLCC

In Stock357

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Manufacturer: TT Electronics/Optek Technology
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Supplier Device Package: 6-CLCC
JANTX2N3810L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

In Stock286

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
HCT700TX
TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V/60V SMT

In Stock406

More on Order

Manufacturer: TT Electronics/Optek Technology
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 800mA, 600mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: -
HCT700TXV
TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V/60V SMT

In Stock507

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Manufacturer: TT Electronics/Optek Technology
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 800mA, 600mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: -
2N2919
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock444

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N2060L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.5A TO78

In Stock517

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N2919L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock227

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N2920L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock333

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N2920
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO-78

In Stock277

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N3810U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A TO-78

In Stock302

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JAN2N2919L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock543

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JAN2N2920L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock536

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N5795
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.6A TO-78

In Stock366

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JAN2N3810U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

In Stock619

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N3810L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

In Stock632

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTX2N6987
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A TO116

In Stock280

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/558
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -
JANTX2N3810U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

In Stock565

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTX2N2919L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock619

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTX2N6989
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A TO116

In Stock362

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116
JANTX2N2920
Microsemi

Transistors - Bipolar (BJT) - Arrays

NPN TRANSISTOR

In Stock151

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N2920
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO-78

In Stock242

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N2919
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock486

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N2920U
Microsemi

Transistors - Bipolar (BJT) - Arrays

PNP TRANSISTOR

In Stock236

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
JANTXV2N2919L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock352

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N2920L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

In Stock340

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N6988
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A 14FLATPACK

In Stock566

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack
JAN2N6988
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A

In Stock322

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/558
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack