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Bipolar (BJT) - Arrays

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays
Records 1,432
Page 33/48
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JAN2N6989
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A TO116

In Stock546

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116
JAN2N6990
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A 14PIN

In Stock451

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack
2N2919U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

In Stock252

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
JAN2N2919U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

In Stock577

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
JAN2N2920U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

In Stock301

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
JANTXV2N3810U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

In Stock381

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
2N3838
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 0.6A 6 PFLTPK

In Stock482

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-FlatPack
Supplier Device Package: 6-Flatpack
JAN2N6987
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A TO116

In Stock624

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/558
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -
JANTXV2N6987
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A TO116

In Stock244

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/558
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -
2N6987
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A TO116

In Stock243

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116
JANTXV2N6988
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A

In Stock199

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/558
Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack
JANTXV2N6989
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A TO116

In Stock497

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116
JANTX2N2919U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

In Stock296

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
JANTX2N2920U
Microsemi

Transistors - Bipolar (BJT) - Arrays

NPN TRANSISTOR

In Stock457

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
JAN2N2060L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.5A TO78

In Stock463

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/270
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N2919U
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

In Stock628

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
2N6990
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A

In Stock286

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack
JANTXV2N6990
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A 14PIN

In Stock497

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack
JANTX2N2060L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.5A TO78

In Stock158

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/270
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANTXV2N2060L
Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.5A TO78

In Stock468

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/270
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
JANSR2N3810U
Microsemi

Transistors - Bipolar (BJT) - Arrays

RH SMALL-SIGNAL BJT

In Stock313

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/336
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
JANSR2N2920U
Microsemi

Transistors - Bipolar (BJT) - Arrays

RH SMALL-SIGNAL BJT

In Stock408

More on Order

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/355
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
STD845DN40
STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 400V 4A 8DIP

In Stock377

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Manufacturer: STMicroelectronics
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
LM394CH/NOPB
Texas Instruments

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V 0.02A TO99-6

In Stock446

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Manufacturer:
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-99-6 Metal Can
Supplier Device Package: TO-99-6
ZDT605TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN DARL 120V 1A SM8

In Stock476

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN Darlington (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Power - Max: 2.75W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8
ZDT619TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 2A SM8

In Stock436

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 2.5W
Frequency - Transition: 165MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8
ZDT649TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 25V 2A SM8

In Stock460

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 2.75W
Frequency - Transition: 240MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8
ZDT651TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 2A SM8

In Stock512

More on Order

Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 2.75W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8
ZDT6702TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP DARL 60V 1.75A SM8

In Stock383

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: NPN, PNP Darlington (Dual)
Current - Collector (Ic) (Max): 1.75A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V
Power - Max: 2.75W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8
ZDT6705TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP DARL 120V 1A SM8

In Stock335

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: NPN, PNP Darlington (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Power - Max: 2.75W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8