Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

Page 19/51

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NE678M04-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 12GHZ SOT343F	In Stock481 More on Order	Manufacturer: CEL	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 12GHz	Noise Figure (dB Typ @ f): 1.7dB @ 2GHz	Gain: 13.5dB	Power - Max: 205mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: SOT-343F
NE68033-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SOT23	In Stock206 More on Order	Manufacturer: CEL	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 10GHz	Noise Figure (dB Typ @ f): 1.8dB @ 2GHz	Gain: 9dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
NE68133-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ SOT23	In Stock254 More on Order	Manufacturer: CEL	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 9GHz	Noise Figure (dB Typ @ f): 1.2dB @ 1GHz	Gain: 13dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
NE68833-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 4.5GHZ SOT23	In Stock232 More on Order	Manufacturer: CEL	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 4.5GHz	Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
NE97733-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 8.5GHZ SOT23	In Stock503 More on Order	Manufacturer: CEL	Series: -	Transistor Type: PNP	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8.5GHz	Noise Figure (dB Typ @ f): 1.5dB @ 1GHz	Gain: 12dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
NE97833-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 5.5GHZ SOT23	In Stock481 More on Order	Manufacturer: CEL	Series: -	Transistor Type: PNP	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 5.5GHz	Noise Figure (dB Typ @ f): 2dB @ 1GHz	Gain: 10dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
NESG2101M05-A	CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 17GHZ M05	In Stock330 More on Order	Manufacturer: CEL	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 17GHz	Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz	Gain: 11dB ~ 19dB	Power - Max: 500mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: M05
BFP640FE6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ 4TSFP	In Stock255 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.5V	Frequency - Transition: 40GHz	Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	Gain: 23dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, Flat Leads	Supplier Device Package: 4-TSFP
2SC22950BL	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 250MHZ MINI3-G1	In Stock604 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 250MHz	Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G1
2N5770_D75Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3	In Stock501 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 15dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BF240	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3	In Stock545 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 40V	Frequency - Transition: 1.1GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
2N5770_D26Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3	In Stock451 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 15dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BF199	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3	In Stock305 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 1.1GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
2N5770_D27Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3	In Stock518 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 15dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
2N5770_D74Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3	In Stock418 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: -	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 15dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
2N3663	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2.1GHZ TO92-3	In Stock332 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 2.1GHz	Noise Figure (dB Typ @ f): 6.5dB @ 60MHz	Gain: 1.5dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
BF494	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3	In Stock337 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
BF494_D27Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3	In Stock209 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BF494_D74Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3	In Stock232 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BF240_D74Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3	In Stock306 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 40V	Frequency - Transition: 1.1GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BF240_ND74Z	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3	In Stock649 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 40V	Frequency - Transition: 1.1GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
BFQ31ATA	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3	In Stock496 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: -	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFQ31ATC	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3	In Stock333 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: -	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFS17HTC	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.3GHZ SOT23-3	In Stock249 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.3GHz	Noise Figure (dB Typ @ f): 4.5dB @ 500MHz	Gain: -	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V	Current - Collector (Ic) (Max): 25mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
FMMT5179TC	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ SOT23-3	In Stock580 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 2GHz	Noise Figure (dB Typ @ f): 4.5dB @ 200MHz	Gain: 15dB	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
FMMT918TC	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3	In Stock467 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 15dB	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
FMMTH10TC	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23-3	In Stock507 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz	Gain: -	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V	Current - Collector (Ic) (Max): 25mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
ZTX325STOA	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.3GHZ E-LINE	In Stock457 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.3GHz	Noise Figure (dB Typ @ f): 5dB @ 500MHz	Gain: 53dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: E-Line-3, Formed Leads	Supplier Device Package: E-Line (TO-92 compatible)
ZTX325STOB	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.3GHZ E-LINE	In Stock346 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.3GHz	Noise Figure (dB Typ @ f): 5dB @ 500MHz	Gain: 53dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: E-Line-3, Formed Leads	Supplier Device Package: E-Line (TO-92 compatible)
ZTX325STZ	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.3GHZ E-LINE	In Stock417 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.3GHz	Noise Figure (dB Typ @ f): 5dB @ 500MHz	Gain: 53dB	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: E-Line-3, Formed Leads	Supplier Device Package: E-Line (TO-92 compatible)