Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
FJN3303RTA	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3	In Stock255 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 300mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
RN1101CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock233 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1102CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock265 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1103CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock262 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1104CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock437 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1105CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock303 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1106CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock357 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1107CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock228 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1108CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1109CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock542 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1110CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock632 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1111CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock352 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1112CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock531 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1113CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3	In Stock368 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1101ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock369 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1102ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock677 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1103ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock374 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1104ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock501 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1105ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock416 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1106ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock229 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1108ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock635 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1109ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock251 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1111ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock465 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1112ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W CST3	In Stock403 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 80mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN1110(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM	In Stock363 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
RN2101CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3	In Stock503 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN2102CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3	In Stock434 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN2103CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3	In Stock398 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN2104CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3	In Stock223 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3
RN2105CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3	In Stock409 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 50mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: CST3