Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single MEDIUM POWER TRANSISTOR |
In Stock140 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V |
Power - Max: 1.35W |
Frequency - Transition: 140MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single HIGH-VOLTAGE TRANSISTOR |
In Stock388 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 250V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V |
Power - Max: 1.2W |
Frequency - Transition: 60MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single 9605 AUTO TRENCH PLUS |
In Stock518 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single BISS |
In Stock300 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 250mA |
Voltage - Collector Emitter Breakdown (Max): 500V |
Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V |
Power - Max: 700mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single BISS |
In Stock329 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Power - Max: 2W |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single BISS |
In Stock572 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Power - Max: 2W |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single SWITCHING TRANSISTOR |
In Stock205 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 1.15W |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single SWITCHING TRANSISTOR |
In Stock514 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 1.15W |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single SWITCHING TRANSISTOR |
In Stock306 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 1.15W |
Frequency - Transition: 200MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single SWITCHING TRANSISTOR |
In Stock575 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 1.15W |
Frequency - Transition: 200MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single SWITCHING TRANSISTOR |
In Stock568 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V |
Power - Max: 1.15W |
Frequency - Transition: 250MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single DARLINGTON TRANSISTOR |
In Stock286 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 1.25W |
Frequency - Transition: 125MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single DARLINGTON TRANSISTOR |
In Stock522 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 1.25W |
Frequency - Transition: 125MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single HIGH-VOLTAGE TRANSISTOR |
In Stock399 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 1.2W |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single HIGH-VOLTAGE TRANSISTOR |
In Stock293 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V |
Power - Max: 1.35W |
Frequency - Transition: 20MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single HIGH-VOLTAGE TRANSISTOR |
In Stock350 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V |
Power - Max: 1.2W |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SC-73 |
|
|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 0.5A 80V |
In Stock375 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: - |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 0.5A 80V |
In Stock413 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: - |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock672 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock520 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock211 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock484 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-39 |
In Stock306 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 700V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 5mA, 25mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-39 |
In Stock364 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 800V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 5mA, 20mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-39 |
In Stock145 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 900V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 5mA, 20mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-39 |
In Stock156 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 1000V |
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 5mA, 20mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock480 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 500V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: 4W |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock473 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 600V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: 4W |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-5 |
In Stock310 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 800V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: 4W |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
Renesas Electronics America |
Transistors - Bipolar (BJT) - Single TRANSISTOR PNP USM SC-75 |
In Stock595 More on Order |
|
Manufacturer: Renesas Electronics America |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |