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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 434/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR |
In Stock421 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 800V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR |
In Stock252 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 900V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR |
In Stock326 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 900V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR |
In Stock206 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 1000V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR |
In Stock517 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 1000V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock324 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 700V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock442 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 700V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock665 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 800V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock165 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 800V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock166 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 900V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock158 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 900V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock405 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 1000V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR |
In Stock311 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/727 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 1000V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 (TO-205AD) |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single PNP POWER TRANSISTOR SILICON AMP |
In Stock337 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A DPAK |
In Stock553 More on Order |
|
Manufacturer: Micro Commercial Co |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1.5A |
Voltage - Collector Emitter Breakdown (Max): 160V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V |
Power - Max: 1W |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: D-Pak |
|
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 5A DPAK |
In Stock468 More on Order |
|
Manufacturer: Micro Commercial Co |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 5A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V |
Power - Max: 1W |
Frequency - Transition: 20MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: D-Pak |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single IC POWER MANAGEMENT |
In Stock489 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V |
Power - Max: 1W |
Frequency - Transition: 300MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223-4 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single INTEGRATED CIRCUIT |
In Stock381 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V |
Power - Max: 350mW |
Frequency - Transition: 250MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single INTEGRATED CIRCUIT |
In Stock210 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA |
Current - Collector Cutoff (Max): 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 250MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN |
In Stock255 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 4A |
Voltage - Collector Emitter Breakdown (Max): 325V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A |
Current - Collector Cutoff (Max): 5mA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V |
Power - Max: 40W |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 |
Supplier Device Package: TO-220-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN |
In Stock590 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V |
In Stock392 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V |
Power - Max: 2W |
Frequency - Transition: 3MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 |
Supplier Device Package: TO-220-3 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 100V |
In Stock508 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 100V TO220 |
In Stock666 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Microsemi |
Transistors - Bipolar (BJT) - Single SMALL-SIGNAL BJT |
In Stock502 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: TO-18 |
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|
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Microsemi |
Transistors - Bipolar (BJT) - Single POWER BJT |
In Stock177 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-SMD, No Lead |
Supplier Device Package: UA |
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|
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Microsemi |
Transistors - Bipolar (BJT) - Single SMALL-SIGNAL BJT |
In Stock261 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/366 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: TO-5 |
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|
|
Microsemi |
Transistors - Bipolar (BJT) - Single SMALL-SIGNAL BJT |
In Stock319 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/255 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 650mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-SMD, No Lead |
Supplier Device Package: UB |
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|
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Microsemi |
Transistors - Bipolar (BJT) - Single SMALL-SIGNAL BJT |
In Stock540 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/255 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 500mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-SMD, No Lead |
Supplier Device Package: UB |
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Microsemi |
Transistors - Bipolar (BJT) - Single SMALL-SIGNAL BJT |
In Stock487 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/317 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 400nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V |
Power - Max: 400mW |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-SMD, No Lead |
Supplier Device Package: UB |