Top

FETs, MOSFETs - Arrays

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 102/128
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSD235C L6327
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT-363

In Stock272

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BSL214NL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 1.5A 6TSOP

In Stock382

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSL316CL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V TSOP-6

In Stock266

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.25A CST6D

In Stock245

More on Order

Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 140mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: CST6D
SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.8A ES6

In Stock481

More on Order

Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)
SSM6N7002BFE(T5L,F
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.2A ES6

In Stock665

More on Order

Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)
SSM6N7002BFU(T5L,F
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.2A US6

In Stock362

More on Order

Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
BSD235N L6327
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.95A SOT363

In Stock501

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BSL205NL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 2.5A 6TSOP

In Stock361

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSL215CL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 1.5A TSOP-6

In Stock545

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSL215PL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 1.5A TSOP-6

In Stock222

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSL306NL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2.3A 6TSOP

In Stock157

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSL315PL6327HTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 1.5A TSOP-6

In Stock456

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-6
BSO330N02KGFUMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.4A 8DSO

In Stock396

More on Order

Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
NTJD3158CT2G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SC88-6

In Stock501

More on Order

Manufacturer: ON Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
PHKD3NQ10T,518
Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 100V 3A 8SOIC

In Stock281

More on Order

Manufacturer: Nexperia USA Inc.
Series: TrenchMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V
Power - Max: 2W
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
BUK9MJT-55PRF,518
Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 55V 20SOIC

In Stock346

More on Order

Manufacturer: Nexperia USA Inc.
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO
NTMD6601NR2G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 80V 1.1A 8SOIC

In Stock396

More on Order

Manufacturer: ON Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
DMG4932LSD-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 9.5A 8SO

In Stock576

More on Order

Manufacturer: Diodes Incorporated
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SP8K5FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.5A 8SOIC

In Stock117

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K1FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5A 8SOIC

In Stock512

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K2FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6A 8SOIC

In Stock124

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K3FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 7A 8SOIC

In Stock301

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K4FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 9A 8SOIC

In Stock216

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K22FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 45V 4.5A 8SOIC

In Stock549

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8K24FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 45V 6A 8SOIC

In Stock303

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8M2FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 3.5A 8SOIC

In Stock448

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8M6FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 5A/3.5A 8SOIC

In Stock501

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8M7FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 5A/7A 8SOIC

In Stock556

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 7A
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
SP8M8FU6TB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

In Stock510

More on Order

Manufacturer: Rohm Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP