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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 100/128
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SI6928DQ-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 4A 8-TSSOP

In Stock530

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Manufacturer: Vishay Siliconix
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
SI6963BDQ-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 3.4A 8-TSSOP

In Stock343

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Manufacturer: Vishay Siliconix
Series: -
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
SI7501DN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 5.4A 1212-8

In Stock595

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
SI7540DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 7.6A PPAK SO-8

In Stock573

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SI7842DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.3A PPAK SO-8

In Stock483

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Manufacturer: Vishay Siliconix
Series: LITTLE FOOT®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SI7844DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.4A PPAK SO-8

In Stock257

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SI7945DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 7A PPAK SO-8

In Stock301

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SI7958DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 40V 7.2A PPAK SO-8

In Stock332

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SI7960DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 6.2A PPAK SO-8

In Stock305

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
SIA914DJ-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.5A SC70-6

In Stock365

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
SIB911DK-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.6A SC75-6

In Stock384

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
FDD8424H_F085
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 9A/6.5A DPAK

In Stock207

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Manufacturer: ON Semiconductor
Series: PowerTrench®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L
UP04878G0L
Panasonic Electronic Components

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 50V .1A SSMINI-6

In Stock533

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Manufacturer: Panasonic Electronic Components
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F2
UP04979G0L
Panasonic Electronic Components

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 50V/30V SSMINI-6

In Stock358

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Manufacturer: Panasonic Electronic Components
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V, 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F2
CSD75301W1015
Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 1.2A 6DSBGA

In Stock266

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Manufacturer:
Series: NexFET™
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)
NTLJD3181PZTAG
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.2A 6WDFN

In Stock155

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
NTLJD3181PZTBG
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.2A 6WDFN

In Stock552

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
NTLJD3183CZTAG
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6WDFN

In Stock502

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Manufacturer: ON Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
NTLJD3183CZTBG
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6WDFN

In Stock437

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Manufacturer: ON Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
DMP57D5UV-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 50V 0.16A SOT563

In Stock289

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Manufacturer: Diodes Incorporated
Series: -
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 25V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
FDS8962C
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 7A/5A 8SOIC

In Stock618

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Manufacturer: ON Semiconductor
Series: PowerTrench®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
FDC6036P_F077
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 5A 6SSOT

In Stock384

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Manufacturer: ON Semiconductor
Series: PowerTrench®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package: SuperSOT™-6
SI9936DY
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5A 8-SOIC

In Stock394

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
2N7002DW L6327
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.3A SOT363

In Stock290

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BSD223P L6327
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 0.39A SOT363

In Stock300

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BTS7904BATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 55V/30V 40A TO263

In Stock333

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Power - Max: 69W, 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: PG-TO263-5-1
BTS7904SAKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 55V/30V 40A TO220

In Stock453

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Power - Max: 69W, 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-220-5
Supplier Device Package: PG-TO220-5-13
DMN2040LSD-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7A 8-SOIC

In Stock402

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Manufacturer: Diodes Incorporated
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
IRF8313PBF
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 9.7A 8-SOIC

In Stock340

More on Order

Manufacturer: Infineon Technologies
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
IRF8513PBF
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8A/11A 8-SOIC

In Stock359

More on Order

Manufacturer: Infineon Technologies
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 11A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
Power - Max: 1.5W, 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO