Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3A 6HUSON |
In Stock457 More on Order |
|
Manufacturer: Renesas Electronics America |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 79mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V |
Power - Max: 2.3W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-HUSON (2x2) |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 4A 6HUSON |
In Stock447 More on Order |
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Manufacturer: Renesas Electronics America |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V |
Power - Max: 2.3W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-HUSON (2x2) |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 9A/7A 8SOIC |
In Stock554 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A, 7A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/4.5A 8SOIC |
In Stock609 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 5.7A 8SO |
In Stock560 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.7A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V |
Power - Max: 1.81W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8MSOP |
In Stock508 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8DIP |
In Stock338 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8SOIC |
In Stock462 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 30A SP1 |
In Stock468 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 30A SP1 |
In Stock186 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP2 |
In Stock406 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP2 |
Supplier Device Package: SP2 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 59A SP3 |
In Stock375 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 900V 59A SP6-P |
In Stock588 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP1 |
In Stock671 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 66A SP2 |
In Stock213 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Phase Leg) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 66A |
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V |
Power - Max: 416W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP2 |
Supplier Device Package: SP2 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N-CH 600V 36A SP1 |
In Stock268 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 3 N Channel (Phase Leg + Boost Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 36A |
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N-CH 600V 36A SP1 |
In Stock339 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 3 N Channel (Phase Leg + Boost Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 36A |
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
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|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 49A SP1 |
In Stock357 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 39A SP1 |
In Stock477 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 39A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 59A SP2 |
In Stock318 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP2 |
Supplier Device Package: SP2 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 59A SP1 |
In Stock199 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.5A UF6 S |
In Stock249 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA |
Rds On (Max) @ Id, Vgs: 145mOhm @ 250MA, 4V |
Vgs(th) (Max) @ Id: 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V |
Power - Max: 500mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: UF6 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1000V 22A SP6P |
In Stock368 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 22A |
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: SP6-P |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 22A SP3 |
In Stock496 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 22A |
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 139A SP3 |
In Stock426 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS V® |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 139A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3 |
In Stock220 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 17A |
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 104A SP3 |
In Stock451 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 104A |
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 51A SP3 |
In Stock582 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 20A SP3 |
In Stock414 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V |
Power - Max: 520W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 154A SP3 |
In Stock305 More on Order |
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Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 154A (Tc) |
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
Power - Max: 480W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |