Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 109A SP3 |
In Stock522 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 109A (Tc) |
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V |
Power - Max: 480W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 52A SP3 |
In Stock610 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 52A |
Rds On (Max) @ Id, Vgs: 108mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
Power - Max: 568W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 49A SP1 |
In Stock220 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 39A SP1 |
In Stock367 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 39A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 49A SP1 |
In Stock222 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 39A SP1 |
In Stock591 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 39A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 250W |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 900V 30A SP4 |
In Stock359 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 59A SP4 |
In Stock506 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB |
In Stock649 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/597 |
FET Type: 4 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1A |
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB |
In Stock240 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/599 |
FET Type: 4 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 750mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: - |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB |
In Stock295 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/597 |
FET Type: 4 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1A |
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB |
In Stock601 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/599 |
FET Type: 4 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 750mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB |
In Stock510 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/597 |
FET Type: 4 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1A |
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB |
In Stock470 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/599 |
FET Type: 4 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 750mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB |
In Stock342 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1A |
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB |
In Stock554 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 750mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: MO-036AB |
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 11A 8-SOIC |
In Stock472 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: SRFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 23A/40A 8DFN |
In Stock419 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: SRFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 23A, 40A |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V |
Power - Max: 5W, 4.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-DFN-EP (5x6) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8-DFN |
In Stock465 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-XFLGA Exposed Pad |
Supplier Device Package: 8-AlphaDFN (3.2x2) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 20A/28A 8-DFN |
In Stock488 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: SRFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A, 28A |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V |
Power - Max: 3.6W, 4.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: 8-DFN (5x6) |
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|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.5A SC70-6L |
In Stock365 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V |
Power - Max: 7.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SC-70-6 Dual |
Supplier Device Package: PowerPAK® SC-70-6 Dual |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 16A SA |
In Stock397 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 16A |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V |
Power - Max: 1.7W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: DirectFET™ Isometric SA |
Supplier Device Package: DIRECTFET™ SA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 14A DIRECTFET |
In Stock411 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A |
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V |
Power - Max: 2.1W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: DirectFET™ Isometric MC |
Supplier Device Package: DIRECTFET™ MC |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.6A HUSON6 |
In Stock305 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V |
Power - Max: 510mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: DFN2020-6 |
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|
NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4A HUSON6 |
In Stock372 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V |
Power - Max: 510mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: DFN2020-6 |
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|
NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.9A HUSON6 |
In Stock474 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.9A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V |
Power - Max: 510mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: DFN2020-6 |
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|
NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.1A HUSON6 |
In Stock284 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.1A |
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V |
Power - Max: 510mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: DFN2020-6 |
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Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 6DFN |
In Stock611 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V |
Power - Max: 510mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: 6-HUSON-EP (2x2) |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2.4A HUSON6 |
In Stock281 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.4A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V |
Power - Max: 475mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: DFN2020-6 |
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NXP |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 1.2A 6TSSOP |
In Stock384 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.2A |
Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V |
Power - Max: 390mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |