Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock9,979 More on Order |
|
Manufacturer: EPC |
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock16,569 More on Order |
|
Manufacturer: EPC |
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A |
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock16,887 More on Order |
|
Manufacturer: EPC |
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A |
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MOD 1200V 25A |
In Stock576 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tj) |
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) |
Vgs(th) (Max) @ Id: 5.55V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V |
Power - Max: 20mW |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY1BM-2 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MOD 1200V 50A |
In Stock599 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tj) |
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id: 5.55V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V |
Power - Max: 20mW |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY1BM-2 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 100V SOT523 |
In Stock4,421 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 |
In Stock4,827 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.1A ES6 |
In Stock6,040 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT-563 |
In Stock26,976 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 150mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Micro Commercial Co |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6A/4.1A |
In Stock4,377 More on Order |
|
Manufacturer: Micro Commercial Co |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6A, 4.1A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VDFN Exposed Pad |
Supplier Device Package: DFN2020-6U |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.5A SC70-6 |
In Stock8,172 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 7.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SC-70-6 Dual |
Supplier Device Package: PowerPAK® SC-70-6 Dual |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 305MA SOT26 |
In Stock4,494 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 305mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 400mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-26 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 2.7A 6HUSON |
In Stock3,911 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V |
Power - Max: 510mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: 6-HUSON-EP (2x2) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT-563 |
In Stock353 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 150mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 8A 8SOIC |
In Stock4,111 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V |
Power - Max: 2.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays -20V PCH+PCH POWER MOSFET |
In Stock4,641 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: - |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-PowerUDFN |
Supplier Device Package: HUML2020L8 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.1A SSMINI-6 |
In Stock239 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.3V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V |
Power - Max: 125mW |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMINI6-F1 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 8V 24V POWERDI5060-8 |
In Stock3,397 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V |
Power - Max: 2.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PowerDI5060-8 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A SSMINI-5 |
In Stock650 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 125mW |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-665 |
Supplier Device Package: SSMini5-F2 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A ES6 |
In Stock199 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2.9A DFN |
In Stock486 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V |
Power - Max: 1.7W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-VDFN Exposed Pad |
Supplier Device Package: W-DFN3020-8 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A WMINI8 |
In Stock4,777 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: WMini8-F1 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8SOIC |
In Stock9,742 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.5A 6DFN |
In Stock208 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
Power - Max: 265mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: DFN1010B-6 |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V SC89-6 |
In Stock523 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) |
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
Power - Max: 220mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SC-89-6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT563 |
In Stock325 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 305mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 250mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A SC-88 |
In Stock391 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V |
Power - Max: 272mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A SC-88 |
In Stock448 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V |
Power - Max: 272mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays BSS138BKS/SOT363/SC-88 |
In Stock310 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V |
Vgs(th) (Max) @ Id: 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V |
Power - Max: 445mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-563 |
In Stock88,806 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA |
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |