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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

Records 3,829

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI3134KDW-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays DUAL N-CHANNEL MOSFETSOT-363	In Stock40,358 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 750mA	Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SIX3134K-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNELMOSFETSOT-563	In Stock42,895 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 750mA	Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
SSM6P15FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 0.1A ES6	In Stock11,496 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.7V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6 (1.6x1.6)
MC7252KDW-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N+P-CHANNELMOSFETEFFECTSOT-363	In Stock47,652 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V, 50V	Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 40pF, 30pF @ 10V, 5V	Power - Max: 150mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SIL2308-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N/P-CHANNEL MOSFETSOT23-6L	In Stock44,075 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5A, 4A	Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 12nC @ 2.5V	Input Capacitance (Ciss) (Max) @ Vds: 800pF, 405pF @ 8V, 10V	Power - Max: -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-23-6	Supplier Device Package: SOT-23-6L
SSM6L14FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 PB-F SMALL LOW ON RESISTANCE	In Stock13,833 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate, 1.5V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)	Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2nC, 1.76nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 90pF, 110pF @ 10V	Power - Max: 150mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
UM6K31NFHATCN	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays 2.5V DRIVE NCH+NCH MOSFET	In Stock4,865 More on Order	Manufacturer: Rohm Semiconductor	Series: Automotive, AEC-Q101	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: UMT6
SSM6N35AFU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA US6	In Stock4,345 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V	Power - Max: 285mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
SSM6P35AFU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS	In Stock4,507 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVII	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V	Power - Max: 285mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
SSM6N36TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS	In Stock9,797 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.5V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V	Power - Max: 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: UF6
SSM6P36TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS	In Stock9,420 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate, 1.5V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)	Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V	Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V	Power - Max: 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: UF6
MCM3400A-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL,MOSFETS,DFN2020-6L PAC	In Stock112,624 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5A	Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-VDFN Exposed Pad	Supplier Device Package: DFN2020-6L
2N7002KDW-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL,MOSFETS,SOT-363 PACKAG	In Stock46,908 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 340mA	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V	Power - Max: 150mW	Operating Temperature: -55°C ~ 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
NTJD4152PT2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.88A SC88-6	In Stock4,829 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 880mA	Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V	Power - Max: 272mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.72A ES6	In Stock5,966 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 720mA	Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6 (1.6x1.6)
DMP210DUDJ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.2A SOT-963	In Stock13,207 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 200mA	Rds On (Max) @ Id, Vgs: 5.5Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.15V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V	Power - Max: 330mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-963	Supplier Device Package: SOT-963
EM6K7T2CR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays 1.2V DRIVE NCH+NCH MOSFET. COMPL	In Stock15,503 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: EMT6
SSM6N68NU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW RON DUAL NCH MOSFETS H	In Stock4,317 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.8V Drive	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V	Power - Max: 2W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-WDFN Exposed Pad	Supplier Device Package: 6-UDFN (2x2)
SSM6N67NU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW RON DUAL NCH MOSFETS I	In Stock5,161 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.8V Drive	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V	Power - Max: 2W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-WDFN Exposed Pad	Supplier Device Package: 6-UDFN (2x2)
CPH6636R-TL-W	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 24V 6A CPH6	In Stock24,262 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual) Common Drain	FET Feature: Logic Level Gate, 2.5V Drive	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 900mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-23-6 Thin, TSOT-23-6	Supplier Device Package: 6-CPH
SQ1922AEEH-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH DUAL 20V .85A SOT-36	In Stock4,610 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)	Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V	Power - Max: 1.5W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-70-6
DMC2004LPK-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6-DFN	In Stock5,086 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA	Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V	Power - Max: 500mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, No Lead	Supplier Device Package: X1-DFN1612-6
SSM6N357R,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW R-ON MOSFETS DUAL NCH	In Stock4,329 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)	Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V	Power - Max: 1.5W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: 6-TSOP-F
SSM6N62TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS	In Stock7,670 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)	Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V	Power - Max: 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: UF6
SQ1912AEEH-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V POWERPAK SC70-6	In Stock4,048 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)	Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V	Power - Max: 1.5W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
DMG1016VQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563	In Stock8,955 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V	Power - Max: 530mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
MCQ4828A-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL ENHANCEMENT MOSFETSOP-	In Stock47,290 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V	Power - Max: 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
DMN2036UCB4-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFETN-CHAN 24V X2-WLB1616-4	In Stock4,540 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual) Common Drain	FET Feature: Standard	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.45W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-XFBGA, WLBGA	Supplier Device Package: X2-WLB1616-4
CSD85302L	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5A	In Stock15,051 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Dual) Common Drain	FET Feature: Standard	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.7W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-XFLGA	Supplier Device Package: 4-Picostar (1.31x1.31)
SIS932EDN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH DL 30V PWRPAK 1212-8	In Stock12,776 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V	Power - Max: 2.6W (Ta), 23W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® 1212-8 Dual	Supplier Device Package: PowerPAK® 1212-8 Dual