Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.33A ES6 |
In Stock397 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 330mA |
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays X34 PB-F SOT-363 S-MOS (LF) TRAN |
In Stock502 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSIII |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V |
Power - Max: 300mW |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH TSSOP6 |
In Stock449 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V, 50V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V, 0.35nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V, 36pF @ 25V |
Power - Max: 330mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V SOT363 |
In Stock474 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 180MA SOT363 |
In Stock355 More on Order |
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Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 |
In Stock487 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA |
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V |
Power - Max: 450mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 |
In Stock151 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A US6 |
In Stock425 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA |
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V |
Power - Max: 200mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock559 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock343 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) |
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock296 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock360 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) |
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V |
Power - Max: 740mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock403 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) |
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock510 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) |
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock559 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V SOT563 |
In Stock600 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 |
In Stock470 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V X2DFN0806-6 |
In Stock376 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) |
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V |
Power - Max: 310mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, No Lead |
Supplier Device Package: X2-DFN0806-6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 20V X2DFN0806-6 |
In Stock364 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 328mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 15V |
Power - Max: 310mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, No Lead |
Supplier Device Package: X2-DFN0806-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL+P-CH |
In Stock456 More on Order |
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Manufacturer: Infineon Technologies |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V SC70-6 |
In Stock469 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 900mA |
Rds On (Max) @ Id, Vgs: 300mOhm @ 900mA, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V |
Power - Max: 300mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V 220MA 6-XLLGA |
In Stock439 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: - |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFLGA |
Supplier Device Package: 6-XLLGA (.90x.65) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET DUAL 20V XLLGA6 |
In Stock316 More on Order |
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Manufacturer: ON Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V |
Power - Max: 125mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFLGA |
Supplier Device Package: 6-XLLGA (.90x.65) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 |
In Stock410 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock385 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta) |
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V |
Power - Max: 840mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2NCH 50V 200MA SOT363 |
In Stock405 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 200mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock521 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) |
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock190 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) |
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R |
In Stock623 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) |
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 6A CSP4 |
In Stock377 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-XFBGA, FCBGA |
Supplier Device Package: 4-EFCP (1.01x1.01) |