Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V/12V TSOT26 |
In Stock406 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V, 12V |
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 5A UDFN2020-6 |
In Stock203 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V U-DFN2020- |
In Stock299 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6-TSOP |
In Stock492 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V |
Power - Max: 1.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 550MA SOT563 |
In Stock379 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
Power - Max: 940mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 50V 280MA SOT563 |
In Stock250 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4A UDFN6 |
In Stock325 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-µDFN (2x2) |
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 4.5A 8SOIC |
In Stock655 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: AlphaMOS |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V |
Power - Max: 1.7W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A UDFN2020-6 |
In Stock470 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 |
In Stock323 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 |
In Stock444 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 |
In Stock531 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V U-DFN2020-6 |
In Stock561 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) |
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V |
Power - Max: 1.36W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V TSOT26 T&R |
In Stock610 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V |
Power - Max: 760mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.43A SOT-363 |
In Stock563 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 430mA |
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V |
Power - Max: 250mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.8A UF6 |
In Stock405 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 800mA |
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V |
Power - Max: 500mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: UF6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 1.6A UF6 |
In Stock347 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V |
Power - Max: 500mW |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: UF6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V SOT363 |
In Stock590 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 |
In Stock309 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.11A 6DFN |
In Stock227 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) |
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V |
Power - Max: 1.39W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: X2-DFN1310-6 (Type B) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 |
In Stock250 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA |
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V |
Power - Max: 530mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN2020-6 |
In Stock493 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V |
Power - Max: 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
Micro Commercial Co |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 30V 3A SOT23-6L |
In Stock260 More on Order |
|
Manufacturer: Micro Commercial Co |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V |
Power - Max: 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-23-6L |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V/50V |
In Stock465 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V, 50V |
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA |
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 200mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V/12V TSOT26 |
In Stock437 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V, 12V |
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 |
In Stock412 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V U-DFN2020-6 |
In Stock488 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 6-TSOP |
In Stock567 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V |
Power - Max: 1.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 550MA SOT563 |
In Stock476 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
Power - Max: 940mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-WLB1010-4 |
In Stock227 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) |
Rds On (Max) @ Id, Vgs: 23mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-UFBGA, WLBGA |
Supplier Device Package: U-WLB1010-4 |