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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 63/128
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AON6810
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 25A 8-DFN

In Stock400

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Manufacturer: Alpha & Omega Semiconductor Inc.
Series: -
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
Power - Max: 4.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-DFN-EP (5.2x5.55)
BSC0924NDIATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 17A/32A TISON8

In Stock163

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8
BSC0923NDIATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 17A/32A TISON8

In Stock398

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8
ZXMP6A16DN8TA
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.9A 8-SOIC

In Stock173

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Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Power - Max: 2.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
ZXMP6A16DN8TC
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.9A 8-SOIC

In Stock172

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Manufacturer: Diodes Incorporated
Series: -
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SH8K2TB1
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6A SOP8

In Stock199

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SOP (5.0x6.0)
NTLGD3502NT2G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

In Stock570

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.74W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)
BSZ215CHXTMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 8TDSON

In Stock296

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Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS™
FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
IPG20N10S4L35AATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 8TDSON

In Stock220

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Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Power - Max: 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10
IPG20N04S412AATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 8TDSON

In Stock223

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Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Power - Max: 41W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10
DMPH6050SPDQ-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 P-CH 26A POWERDI5060-8

In Stock231

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Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
SI4670DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 25V 8A 8-SOIC

In Stock394

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI7900AEDN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 6A PPAK 1212-8

In Stock234

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
SI3948DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6-TSOP

In Stock659

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI4276DY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8A 8SO

In Stock277

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 3.6W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
QS8K51TR
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2A TSMT8

In Stock521

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
NVMFD5C470NWFT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

40V 11.7 MOHM T8 S08FL DU

In Stock267

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
SH8K15TB1
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 9A 8SOP

In Stock499

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
NTTFS5C466NLTAG
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

AFSM T6 40V LL U8FL

In Stock463

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
LN60A01ES-LF-Z
Monolithic Power Systems Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 3N-CH 600V 0.08A 8SOIC

In Stock421

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Manufacturer: Monolithic Power Systems Inc.
Series: -
FET Type: 3 N-Channel, Common Gate
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 190Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -20°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
DMHT3006LFJ-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V V-DFN5045-

In Stock592

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Manufacturer: Diodes Incorporated
Series: -
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerVDFN
Supplier Device Package: V-DFN5045-12
SP8K31TB1
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 3.5A 8SOIC

In Stock594

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
DMTH6016LPDQ-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 41V-60V POWERDI506

In Stock189

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Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 2.5W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
DMNH6035SPDW-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 41V-60V POWERDI506

In Stock635

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Manufacturer: Diodes Incorporated
Series: *
FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
TPC8408,LQ(S
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

In Stock480

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
AOE6936
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V 55A/85A 8DFN

In Stock326

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Manufacturer: Alpha & Omega Semiconductor Inc.
Series: -
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Power - Max: 24W, 39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)
NVMFD5875NLWFT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 7A SO8FL

In Stock549

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Manufacturer: ON Semiconductor
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
SH8M41GZETB
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

In Stock426

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
NTMFD5C466NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Arrays

40V 8.1 MOHM T8 S08FL DUA

In Stock573

More on Order

Manufacturer: ON Semiconductor
Series: -
FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IPG20N06S2L50ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 55V 20A TDSON-8-4

In Stock389

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 51W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4