Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 49A SP1 |
In Stock230 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 37A SP3 |
In Stock548 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 37A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V |
Power - Max: 312W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP3 |
In Stock387 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP3 |
In Stock256 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP3 |
In Stock221 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP3 |
In Stock539 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP3F |
In Stock509 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: - |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 40A V2 |
In Stock325 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 40A |
Rds On (Max) @ Id, Vgs: 116mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: V2-PAK |
Supplier Device Package: V2-PAK |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 72A SP3 |
In Stock401 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 416W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4 |
In Stock313 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 175A |
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 89A SP4 |
In Stock568 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 89A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 800V 28A SP4 |
In Stock336 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 28A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V |
Power - Max: 277W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 139A SP3 |
In Stock475 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 139A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 75V 120A SP6-P |
In Stock474 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 120A |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V |
Power - Max: 138W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP3 |
In Stock360 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 18A |
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 100V 70A SP6-P |
In Stock530 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 70A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V |
Power - Max: 208W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 278A SP4 |
In Stock373 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 278A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4 |
In Stock166 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 |
In Stock427 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP4 |
In Stock338 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 208A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 89A SP4 |
In Stock660 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 89A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 22A SP3 |
In Stock573 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 22A |
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 800V 28A SP6P |
In Stock554 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 28A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V |
Power - Max: 277W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 800V 28A SP6-P |
In Stock493 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 28A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V |
Power - Max: 277W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 36A SP4 |
In Stock244 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 36A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4 |
In Stock226 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 175A |
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP4 |
In Stock621 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 208A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 104A SP4 |
In Stock435 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 104A |
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 75V 270A V2-PAK |
In Stock463 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 270A |
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: V2-PAK |
Supplier Device Package: V2-PAK |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP6 |
In Stock410 More on Order |
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Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |