Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP4 |
In Stock450 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 99A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 51A SP4 |
In Stock324 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 72A SP4 |
In Stock334 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 416W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 39A SP4 |
In Stock226 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 39A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 43A SP4 |
In Stock478 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 43A |
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 22A SP4 |
In Stock529 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 22A |
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 34A SP4 |
In Stock456 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 34A |
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 |
In Stock358 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 95A SP3 |
In Stock483 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 278A SP6 |
In Stock397 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 278A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4 |
In Stock267 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 49A SP4 |
In Stock605 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
Power - Max: 250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP4 |
In Stock377 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: CoolMOS™ |
FET Type: 2 N Channel (Phase Leg) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 100V 139A SP6-P |
In Stock427 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 139A |
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 300A SP6 |
In Stock529 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 300A |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 51A SP6-P |
In Stock294 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
IXYS |
Transistors - FETs, MOSFETs - Arrays POWER MOSFET |
In Stock526 More on Order |
|
Manufacturer: IXYS |
Series: CoolMOS™ |
FET Type: 2 N-Channel (Dual) Common Source |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 58A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 9-SMD Power Module |
Supplier Device Package: SMPD |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC |
In Stock116 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual), Schottky |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 74A (Tc) |
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 3V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V |
Power - Max: 470W |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 600V 72A SP6-P |
In Stock401 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 416W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 600V 72A SP6-P |
In Stock573 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 72A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA |
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 416W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 317A SP6 |
In Stock305 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 317A |
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V |
Power - Max: 1136W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 495A SP6 |
In Stock261 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 495A |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 200V 104A SP6-P |
In Stock207 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 104A |
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 50A SP6 |
In Stock484 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: 240mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 50A SP6 |
In Stock302 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: 240mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 317A SP6 |
In Stock355 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 317A |
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V |
Power - Max: 1136W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 65A SP6 |
In Stock361 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 65A |
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 175A SP6 |
In Stock281 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 175A |
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1000V 22A SP6-P |
In Stock495 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 22A |
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 900V 85A Y3-LI |
In Stock431 More on Order |
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Manufacturer: IXYS |
Series: * |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |