FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM100DUM90G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 78A SP6	In Stock339 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1000V (1kV)	Current - Continuous Drain (Id) @ 25°C: 78A	Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM100H80FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 11A SP1	In Stock598 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1000V (1kV)	Current - Continuous Drain (Id) @ 25°C: 11A	Rds On (Max) @ Id, Vgs: 960mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V	Power - Max: 208W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
APTM100TDU35PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1000V 22A SP6-P	In Stock490 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1000V (1kV)	Current - Continuous Drain (Id) @ 25°C: 22A	Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM10DDAM09T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 139A SP3	In Stock183 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 139A	Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM10DDAM19T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 70A SP3	In Stock378 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 70A	Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	Power - Max: 208W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM10DHM09TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 139A SP4	In Stock659 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 139A	Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM10DUM05TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 278A SP4	In Stock215 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 278A	Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V	Vgs(th) (Max) @ Id: 4V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V	Power - Max: 780W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM10HM09FTG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 139A SP4	In Stock551 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 139A	Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM10TDUM09PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 100V 139A SP6-P	In Stock342 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 139A	Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM10TDUM19PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 100V 70A SP6-P	In Stock549 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 70A	Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	Power - Max: 208W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM120A65FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 16A SP1	In Stock406 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 16A	Rds On (Max) @ Id, Vgs: 780mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
APTM120A80FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 14A SP1	In Stock326 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 14A	Rds On (Max) @ Id, Vgs: 960mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V	Power - Max: 357W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
APTM120DDA57T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3	In Stock277 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM120DSK57T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3	In Stock391 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM120DU29TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 34A SP4	In Stock242 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 34A	Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V	Power - Max: 780W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM120H57FT3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 17A SP3	In Stock592 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM120H57FTG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 17A SP4	In Stock554 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM120TA57FPG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 17A SP6-P	In Stock183 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM120TDU57PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 17A SP6-P	In Stock223 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 17A	Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM20AM05FTG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 333A SP4	In Stock299 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 333A	Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM20DHM08G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP6	In Stock417 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 208A	Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V	Power - Max: 781W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM20DHM10G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP6	In Stock444 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 175A	Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V	Power - Max: 694W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM20DHM16TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 104A SP4	In Stock202 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 104A	Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM20DHM20TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 89A SP4	In Stock342 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 89A	Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V	Power - Max: 357W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM20DUM05TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 333A SP8	In Stock512 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 333A	Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM20DUM10TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4	In Stock468 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 175A	Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V	Power - Max: 694W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM20TDUM16PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 200V 104A SP6-P	In Stock347 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 104A	Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM50A15FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 25A SP1	In Stock376 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 25A	Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V	Power - Max: 208W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
APTM50AM19STG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 170A SP4	In Stock412 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 170A	Rds On (Max) @ Id, Vgs: 19mOhm @ 85A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50AM25FTG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 149A SP4	In Stock245 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 149A	Rds On (Max) @ Id, Vgs: 25mOhm @ 74.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4

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