FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

Records 3,829

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM50AM70FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 50A SP1	In Stock500 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 50A	Rds On (Max) @ Id, Vgs: 84mOhm @ 42A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
APTM50DHM35G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP6	In Stock132 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 99A	Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V	Power - Max: 781W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM50DHM65TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 51A SP4	In Stock362 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 51A	Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50DHM75TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 46A SP4	In Stock648 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 46A	Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V	Power - Max: 357W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50DSK10T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 37A SP3	In Stock442 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 37A	Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V	Power - Max: 312W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM50DSKM65T3G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 51A SP3	In Stock253 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 51A	Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP3	Supplier Device Package: SP3
APTM50DUM17G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 180A SP6	In Stock495 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 180A	Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM50DUM19G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 163A SP6	In Stock631 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 163A	Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V	Power - Max: 1136W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6
APTM50DUM25TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 149A LP8	In Stock574 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 149A	Rds On (Max) @ Id, Vgs: 25mOhm @ 74.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V	Power - Max: 1250W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50DUM35TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP4	In Stock559 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 99A	Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V	Power - Max: 781W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50DUM38TG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4	In Stock378 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 90A	Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V	Power - Max: 694W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
APTM50TDUM65PG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 51A SP6-P	In Stock338 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 51A	Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	Power - Max: 390W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP6	Supplier Device Package: SP6-P
APTM60A23FT1G	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 20A SP1	In Stock315 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A	Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V	Power - Max: 208W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP1	Supplier Device Package: SP1
FDS8960C	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 35V 7A/5A 8SOIC	In Stock592 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 35V	Current - Continuous Drain (Id) @ 25°C: 7A, 5A	Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V	Power - Max: 900mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
IRF7103QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8-SOIC	In Stock451 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 3A	Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V	Power - Max: 2.4W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7105QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V 8-SOIC	In Stock351 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A	Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7303QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 8-SOIC	In Stock324 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7304QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A 8SOIC	In Stock544 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.3A	Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7306QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 3.6A 8SOIC	In Stock339 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.6A	Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7307QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8SOIC	In Stock448 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7309QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC	In Stock240 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A, 3A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7313QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC	In Stock390 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A	Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7314QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5.2A 8SOIC	In Stock331 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.2A	Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V	Power - Max: 2.4W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7316QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC	In Stock443 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A	Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7341QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 5.1A 8-SOIC	In Stock537 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 5.1A	Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V	Power - Max: 2.4W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7343QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V 8-SOIC	In Stock156 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A	Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7379QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC	In Stock348 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A	Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V	Power - Max: 2.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7380QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 3.6A 8-SOIC	In Stock242 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 3.6A	Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7751GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.5A 8TSSOP	In Stock271 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
IRF7752GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.6A 8TSSOP	In Stock437 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.6A	Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP