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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 132/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A TO-220 |
In Stock17,397 More on Order |
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Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 75W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220AB |
In Stock6,924 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 114W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 89A D2PAK |
In Stock2,767 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 170W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 13.2A 1212-8 |
In Stock4,600 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 52W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 5.2A TO-220F |
In Stock10,319 More on Order |
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Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 45W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 8.8A I-PAK |
In Stock3,674 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 3.8A DPAK |
In Stock4,202 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220 |
In Stock2,013 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET®, StrongIRFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 99W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50A |
In Stock5,398 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 136W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock6,359 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 4.7W (Ta), 136W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263AB |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 3A TO-220F |
In Stock13,825 More on Order |
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Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 35W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 38A TO-220 |
In Stock3,108 More on Order |
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Manufacturer: STMicroelectronics |
Series: STripFET™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 160A TO263-7 |
In Stock3,640 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10920pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 167W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-7-3 |
Package / Case: TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 400V 1.8A DPAK |
In Stock8,405 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 49A TO-262 |
In Stock6,567 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 94W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 35A TO-220AB |
In Stock2,129 More on Order |
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Manufacturer: ON Semiconductor |
Series: UltraFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 34mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 93W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK |
In Stock4,061 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 230W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 20A TO220AB |
In Stock5,112 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.5A D2PAK |
In Stock15,750 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 74W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A 4-DIP |
In Stock4,487 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: 4-DIP, Hexdip, HVMDIP |
Package / Case: 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 86A DPAK |
In Stock2,557 More on Order |
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Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 86A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 136W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252) |
Package / Case: TO-252-4, DPak (3 Leads + Tab) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A D2PAK |
In Stock4,364 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 324W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK |
In Stock5,615 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 296W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 3.5A TO-220AB |
In Stock4,525 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A TO220FP |
In Stock3,607 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 54W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB Full-Pak |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6.5A TO-220F |
In Stock4,291 More on Order |
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Manufacturer: ON Semiconductor |
Series: UniFET-II™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 55A D2PAK |
In Stock5,017 More on Order |
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Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.75W (Ta), 155W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D²PAK (TO-263AB) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 1.7A I-PAK |
In Stock3,369 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.3A I-PAK |
In Stock3,026 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N CH 650V 11A DPAK |
In Stock3,397 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |