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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 269/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STW75NF20
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 75A TO-247

In Stock1,071

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Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 25V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
IXTA180N10T
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 180A TO-263

In Stock555

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Manufacturer: IXYS
Series: TrenchMV™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FCA47N60-F109
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 47A TO-3P

In Stock453

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Manufacturer: ON Semiconductor
Series: SuperFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3
STW58N60DM2AG
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 50A

In Stock617

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Manufacturer: STMicroelectronics
Series: Automotive, AEC-Q101, MDmesh™ DM2
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
IXTK180N15P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 180A TO-264

In Stock470

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Manufacturer: IXYS
Series: PolarHT™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
FET Feature: -
Power Dissipation (Max): 800W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA
SIHG70N60EF-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 70A TO-247AC

In Stock572

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Manufacturer: Vishay Siliconix
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 100V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
IXFK150N30X3
IXYS

Transistors - FETs, MOSFETs - Single

300V/150A ULTRA JUNCTION X3-CLAS

In Stock345

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Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 254nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13.1nF @ 25V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA
IXFX64N60P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 64A PLUS247

In Stock543

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Manufacturer: IXYS
Series: HiPerFET™, PolarHT™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
IXFN82N60P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 72A SOT-227B

In Stock539

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Manufacturer: IXYS
Series: PolarHV™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
IXTF02N450
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 4500V 0.2A I4PAK

In Stock407

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Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5 (3 Leads)
IXTT1N450HV
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 4500V 1A TO268

In Stock590

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Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFN38N100P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 38A SOT-227B

In Stock382

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Manufacturer: IXYS
Series: HiPerFET™, PolarP2™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1000W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
IXKN75N60C
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 75A SOT-227B

In Stock297

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Manufacturer: IXYS
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: Super Junction
Power Dissipation (Max): 560W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
APT50M65JFLL
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 58A SOT-227

In Stock551

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
IXFN50N80Q2
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 50A SOT-227B

In Stock453

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Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
FET Feature: -
Power Dissipation (Max): 1135W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
IXFN56N90P
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 56A SOT-227B

In Stock583

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Manufacturer: IXYS
Series: Polar™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1000W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
STE145N65M5
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 143A ISOTOP

In Stock444

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Manufacturer: STMicroelectronics
Series: MDmesh™ V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 414nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 100V
FET Feature: -
Power Dissipation (Max): 679W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: ISOTOP
IXTK5N250
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 2500V 5A TO264

In Stock355

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Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA
VMO1200-01F
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 1245A Y3-LI

In Stock340

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Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 932A, 10V
Vgs(th) (Max) @ Id: 4V @ 64mA
Gate Charge (Qg) (Max) @ Vgs: 2520nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: Y3-Li
Package / Case: Y3-Li
LND150N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 30MA TO92-3

In Stock1,794

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
SFT1342-TL-W
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 12A TP-FA

In Stock1,413

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TN2106N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 300MA TO92-3

In Stock694

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 740mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
TP2104N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 0.175A TO92-3

In Stock1,354

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Manufacturer: Microchip Technology
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: -
Power Dissipation (Max): 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
DN2530N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 0.175A TO92-3

In Stock1,910

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92 (TO-226)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
VN0106N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 350MA TO92-3

In Stock1,541

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
IRF520NSTRLPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 9.7A D2PAK

In Stock1,389

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Manufacturer: Infineon Technologies
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF630NSTRLPBF
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 9.3A D2PAK

In Stock1,687

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Manufacturer: Infineon Technologies
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
FET Feature: -
Power Dissipation (Max): 82W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VP0104N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 0.25A TO92-3

In Stock963

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Manufacturer: Microchip Technology
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
NTD4815N-35G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET NCH 30V 6.9A IPAK TRIMMED

In Stock1,779

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 11.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Stub Leads, IPak
TN0606N3-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 500MA TO92-3

In Stock2,065

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)