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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 268/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON |
In Stock137 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ CFD7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 760µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2721pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 189W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-VSON-4 |
Package / Case: 4-PowerTSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK-3 |
In Stock530 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™-5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4.1V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 313W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON |
In Stock408 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 154W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-VSON-4 |
Package / Case: 4-PowerTSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3 |
In Stock428 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 164W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D²PAK (TO-263AB) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single 80V 300A 1.4MOHM TOLL |
In Stock407 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™-5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 300A (DC) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13178pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-1 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 300A PG-HSOG-8-1 |
In Stock272 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 275µA |
Gate Charge (Qg) (Max) @ Vgs: 231nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 16250pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 375W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOG-8-1 |
Package / Case: 8-PowerSMD, Gull Wing |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200 D2PAK-3 |
In Stock295 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ 3 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V |
Vgs(th) (Max) @ Id: 4.2V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A D2PAK |
In Stock441 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 255W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3-2 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON |
In Stock201 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 201W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-VSON-4 |
Package / Case: 4-PowerTSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET_(75V,120V( |
In Stock271 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™-5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 275µA |
Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 16011pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 375W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-1 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 35A TO263-3 |
In Stock515 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 162W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3 |
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3 |
In Stock352 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 171W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON |
In Stock144 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 850µA |
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 169W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-VSON-4 |
Package / Case: 4-PowerTSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 44A HSOF-8 |
In Stock675 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ G7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 245W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-2 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single IC GAN FET 600V 23A 8HSOF |
In Stock164 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolGaN™ |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.6V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): -10V |
Input Capacitance (Ciss) (Max) @ Vds: 157pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 55.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-3 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 75A HSOF-8 |
In Stock522 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ G7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1.44mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 391W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-2 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single IC GAN FET 600V 60A 8HSOF |
In Stock328 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolGaN™ |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): -10V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-HSOF-8-3 |
Package / Case: 8-PowerSFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single IC GAN FET 600V 60A 20DSO |
In Stock349 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolGaN™ |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): -10V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-20-85 |
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single IC GAN FET 600V 60A 20DSO |
In Stock577 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolGaN™ |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): -10V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-20-87 |
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 38A TO247 |
In Stock438 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ K5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 950V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET P CH 60V 10A TO-220 |
In Stock1,378 More on Order |
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Manufacturer: STMicroelectronics |
Series: DeepGATE™, STripFET™ VI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 33V 80A TO-220 |
In Stock1,860 More on Order |
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Manufacturer: STMicroelectronics |
Series: MESH OVERLAY™ III |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 33V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 55A TO-220AB |
In Stock604 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10A TO-220FP |
In Stock1,491 More on Order |
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Manufacturer: STMicroelectronics |
Series: SuperMESH™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220FP |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 104A TO-220AB |
In Stock1,315 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 104A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 0.1A TO-252AA |
In Stock874 More on Order |
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Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 110Ohm @ 50mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.1W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252, (D-Pak) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO220FP |
In Stock1,523 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 25W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220FP |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 47A TO-220 |
In Stock1,390 More on Order |
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Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220AB |
In Stock646 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 338W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 9A TO-220 |
In Stock1,687 More on Order |
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Manufacturer: STMicroelectronics |
Series: SuperMESH5™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 950V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 90W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |