FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 65/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AON2260	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 6A DFN 2x2B	In Stock27,177 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-DFN-EP (2x2)	Package / Case: 6-UDFN Exposed Pad
FDC642P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A SSOT-6	In Stock16,513 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
NVE4153NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.915A SC89-3	In Stock4,112 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V	Vgs (Max): ±6V	Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V	FET Feature: -	Power Dissipation (Max): 300mW (Tj)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-89	Package / Case: SC-89, SOT-490
CSD17382F4T	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.3A PICOSTAR	In Stock18,994 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V	Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V	Vgs (Max): 10V	Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
RTR025N05TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 45V 2.5A TSMT3	In Stock4,990 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT3	Package / Case: SC-96
AON2290	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 4.5A DFN 2X2B	In Stock40,581 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-DFN-EP (2x2)	Package / Case: 6-UDFN Exposed Pad
NTTFS4C10NTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44A U8FL	In Stock15,068 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V	FET Feature: -	Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
IRF5802TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 0.9A 6-TSOP	In Stock8,090 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: Micro6™(TSOP-6)	Package / Case: SOT-23-6 Thin, TSOT-23-6
SI7615CDN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 35A POWERPAK1212	In Stock7,567 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen III	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V	FET Feature: -	Power Dissipation (Max): 33W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
DMN30H4D0L-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V .25A SOT-23	In Stock4,063 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V	FET Feature: -	Power Dissipation (Max): 310mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
BUK9880-55A/CUX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 7A SOT223	In Stock176,811 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V	FET Feature: -	Power Dissipation (Max): 8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-73	Package / Case: TO-261-4, TO-261AA
MTM231232LBF	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A	In Stock96,659 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V	Vgs(th) (Max) @ Id: 1.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SMini3-G1-B	Package / Case: SC-70, SOT-323
IRLHS6342TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.7A PQFN	In Stock13,311 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-PQFN (2x2)	Package / Case: 6-PowerVDFN
DMP3018SFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETP-CHAN 30V POWERDI3333-8	In Stock3,952 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2147pF @ 15V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
DMN24H3D5L-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 0.48A SOT23	In Stock62,772 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 240V	Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 25V	FET Feature: -	Power Dissipation (Max): 760mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN6068LK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6A DPAK	In Stock49,313 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.12W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP4051LK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 7.2A DPAK	In Stock41,636 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.14W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
MCT06P10-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single P-CHANNEL MOSFETSOT-223	In Stock37,855 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6A	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.25W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
SQ2362ES-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.4A TO236	In Stock46,172 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V	FET Feature: -	Power Dissipation (Max): 3W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
DMT6016LSS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 9.2A 8-SOIC	In Stock37,339 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SI2309CDS-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A SOT23-3	In Stock28,971 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V	FET Feature: -	Power Dissipation (Max): 1W (Ta), 1.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
SQ2348ES-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8A SOT-23	In Stock23,068 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V	FET Feature: -	Power Dissipation (Max): 3W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236	Package / Case: TO-236-3, SC-59, SOT-23-3
SIA427ADJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 12A 6SC-70	In Stock15,053 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 8V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V	Vgs (Max): ±5V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V	FET Feature: -	Power Dissipation (Max): 19W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6
SIB457EDK-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A PPAK SC75-6L	In Stock19,227 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 13W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-75-6L Single	Package / Case: PowerPAK® SC-75-6L
DMN13H750S-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 130V 1A SOT23	In Stock9,637 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 130V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 25V	FET Feature: -	Power Dissipation (Max): 770mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
CPC3982TTR	IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V SOT-23	In Stock4,185 More on Order	Manufacturer: IXYS Integrated Circuits Division	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 0V	Rds On (Max) @ Id, Vgs: 380Ohm @ 20mA, 0V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 400mW (Ta)	Operating Temperature: -55°C ~ 110°C (TA)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN3024LK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.78A DPAK	In Stock3,638 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.17W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8729TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 58A DPAK	In Stock3,936 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 58A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN9R1-30YL,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 57A LFPAK	In Stock4,760 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 57A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.1mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.15V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
FDS8884	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.5A 8-SOIC	In Stock7,407 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)