FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 66/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CSD25481F4T	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.5A 3PICOSTAR	In Stock52,402 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V	Vgs (Max): -12V	Input Capacitance (Ciss) (Max) @ Vds: 189pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
CSD25501F3T	Texas Instruments	Transistors - FETs, MOSFETs - Single 20-V P-CHANNEL FEMTOFET MOSFET	In Stock4,798 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1.05V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.33nC @ 4.5V	Vgs (Max): -20V	Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-LGA (0.73x0.64)	Package / Case: 3-XFLGA
RTF015N03TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.5A TUMT3	In Stock9,782 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V	FET Feature: -	Power Dissipation (Max): 320mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TUMT3	Package / Case: 3-SMD, Flat Leads
FDN304PZ	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.4A SSOT-3	In Stock206,859 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT-3	Package / Case: TO-236-3, SC-59, SOT-23-3
RTR030P02TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A TSMT3	In Stock7,642 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT3	Package / Case: SC-96
IRLMS6702TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.4A 6-TSOP	In Stock4,712 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.7W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: Micro6™(TSOP-6)	Package / Case: SOT-23-6
CSD17484F4T	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.5A 3PICOSTAR	In Stock252,811 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V	Rds On (Max) @ Id, Vgs: 121mOhm @ 500mA, 8V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.2nC @ 8V	Vgs (Max): 12V	Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
CSD23382F4T	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3.5A 3PICOSTAR	In Stock9,518 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.35nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 6V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
MCH3383-TL-W	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3.5A SC70FL	In Stock5,023 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V	Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V	Vgs(th) (Max) @ Id: 800mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 2.5V	Vgs (Max): ±5V	Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70FL/MCPH3	Package / Case: 3-SMD, Flat Leads
SIA427DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 12A SC-70-6	In Stock89,452 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 8V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V	Vgs (Max): ±5V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 19W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6
IRLHS6242TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 10A PQFN	In Stock5,359 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-PQFN (2x2)	Package / Case: 6-PowerVDFN
DMN3032LE-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.6A SOT223	In Stock3,292 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 498pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
DMP3013SFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V 30V POWERDI333	In Stock3,964 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 1674pF @ 15V	FET Feature: -	Power Dissipation (Max): 940mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
TSM4800N15CX6 RFG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 1.4A SOT26	In Stock16,553 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-26	Package / Case: SOT-23-6
FQN1N60CTA	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 300MA TO-92	In Stock21,572 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta), 3W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
ZXMN10A08E6TA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.5A SOT-23-6	In Stock38,236 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V	FET Feature: -	Power Dissipation (Max): 1.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-26	Package / Case: SOT-23-6
BUK6D43-40PX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6A 6DFN2020MD	In Stock22,389 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 43mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 20V	FET Feature: -	Power Dissipation (Max): 15W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
FDN537N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.5A SSOT-3	In Stock12,791 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT-3	Package / Case: TO-236-3, SC-59, SOT-23-3
1HP04CH-TL-W	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.17A SOT-23	In Stock4,094 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V	Vgs(th) (Max) @ Id: 2.6V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-CPH	Package / Case: TO-236-3, SC-59, SOT-23-3
PSMN014-40YS,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V LFPAK	In Stock90,155 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 46A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 20V	FET Feature: -	Power Dissipation (Max): 56W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK98180-100A/CUX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.6A SOT223	In Stock92,860 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V	FET Feature: -	Power Dissipation (Max): 8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-73	Package / Case: TO-261-4, TO-261AA
CSD13383F4T	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 3PICOSTAR	In Stock23,509 More on Order	Manufacturer:	Series: FemtoFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 6V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PICOSTAR	Package / Case: 3-XFDFN
FQD7P06TM	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.4A DPAK	In Stock4,166 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 28W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SI2323DDS-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.3A SOT-23	In Stock34,624 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V	FET Feature: -	Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
PSMN011-30YLC,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 37A LFPAK	In Stock18,646 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 37A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 1.95V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V	FET Feature: -	Power Dissipation (Max): 29W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
PMV213SN,215	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.9A SOT23	In Stock305,431 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 20V	FET Feature: -	Power Dissipation (Max): 280mW (Tj)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN6040SFDE-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.3A U-DFN	In Stock120,067 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V	FET Feature: -	Power Dissipation (Max): 660mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6 (Type E)	Package / Case: 6-UDFN Exposed Pad
DMP6110SVT-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V TSOT26	In Stock49,411 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSOT-26	Package / Case: SOT-23-6 Thin, TSOT-23-6
AOD454A	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 20A TO252	In Stock35,689 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMG4435SSS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.3A 8SOIC	In Stock11,158 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 20V	Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)