FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NVD5863NLT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14.9A DPAK	In Stock213 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVTFS5826NLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A 8WDFN	In Stock287 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 22W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
NDD03N80ZT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2.9A DPAK	In Stock453 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
3LP01SS-TL-E	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.1A SMCP	In Stock253 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V	FET Feature: -	Power Dissipation (Max): 150mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-SSFP	Package / Case: SC-81
SFT1350-TL-H	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 19A TP-FA	In Stock261 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V	FET Feature: -	Power Dissipation (Max): 1W (Ta), 23W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TP-FA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NDT02N40T1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 0.4A SOT223	In Stock427 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Tc)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SOT-223 (TO-261)	Package / Case: TO-261-4, TO-261AA
3LN01C-TB-E	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 150MA 3CP	In Stock599 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V	FET Feature: -	Power Dissipation (Max): 250mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-CP	Package / Case: TO-236-3, SC-59, SOT-23-3
5HP01M-TL-H	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.07A MCP3	In Stock501 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 22Ohm @ 40mA, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V	FET Feature: -	Power Dissipation (Max): 150mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-MCP	Package / Case: SC-70, SOT-323
IPP120N06S402AKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A PG-TO220-3	In Stock389 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 4V @ 140µA	Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V	FET Feature: -	Power Dissipation (Max): 188W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
IPP120N06S403AKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A PG-TO220-3	In Stock444 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 4V @ 120µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V	FET Feature: -	Power Dissipation (Max): 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
IPP90N06S404AKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A PG-TO220-3	In Stock237 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 90µA	Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
IPD50N06S4L12ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO252-3-11	In Stock442 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3-11	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9213-60EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DPAK	In Stock320 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9214-80EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V DPAK	In Stock596 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9216-100EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V DPAK	In Stock155 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9222-100EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V DPAK	In Stock279 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9223-60EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DPAK	In Stock318 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9230-80EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V DPAK	In Stock492 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK9234-100EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V DPAK	In Stock564 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK929R1-60EJ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DPAK	In Stock337 More on Order	Manufacturer: Nexperia USA Inc.	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
PMN27XPEAX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.4A 6TSOP	In Stock255 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: 1.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V	FET Feature: -	Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SC-74, SOT-457
PMN40UPEAX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.7A 6TSOP	In Stock388 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SC-74, SOT-457
PMN70XPEAX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.2A 6TSOP	In Stock473 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SC-74, SOT-457
NVMFS6B14NLWFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 11A DFN5	In Stock666 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
NVMFS6B14NLT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 11A DFN5	In Stock505 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
NVTFS5820NLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 37A 8WDFN	In Stock361 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 21W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
IPI11N60C3AAKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH I2PAK	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
2SJ665-DL-1EX	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 27A TO263	In Stock186 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: 150°C (TA)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2SK4098FS	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6A TO220F-3FS	In Stock172 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V	FET Feature: -	Power Dissipation (Max): 2W	Operating Temperature: 150°C	Mounting Type: Through Hole	Supplier Device Package: TO-220F-3FS	Package / Case: TO-220-3 Full Pack
2SK4125-1EX	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO3P	In Stock473 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 170W (Tc)	Operating Temperature: 150°C (TA)	Mounting Type: Through Hole	Supplier Device Package: TO-3P-3L	Package / Case: TO-3P-3, SC-65-3