FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 953/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R380E6ATMA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 600V 10.6A TO252	In Stock231 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 300µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPU80R2K8CEAKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO251-3	In Stock424 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 120µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO251-3	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IPU80R1K4CEAKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO251-3	In Stock517 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 240µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO251-3	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
NVTFS5820NLTAG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 37A 8WDFN	In Stock171 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 21W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
DMG4N60SCT	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 600V 4.5A TO220	In Stock551 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 25V	FET Feature: -	Power Dissipation (Max): 113W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
DMG4N60SJ3	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 600V 3A TO251	In Stock214 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 25V	FET Feature: -	Power Dissipation (Max): 41W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
DMTH10H030LK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 28A TO252	In Stock609 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-4L	Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
AO4304_001	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 18A 8SOIC	In Stock583 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AOB11C60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-263	In Stock625 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOB20C60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-263	In Stock374 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V	FET Feature: -	Power Dissipation (Max): 463W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOD4160	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-252	In Stock181 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-252-2	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOD516_051	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-252	In Stock376 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOD518_051	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-252	In Stock575 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AOI452A	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET TO-251A	In Stock623 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: SDMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 12.5V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251A	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
AON6516_151	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET DFN 5X6	In Stock286 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (5x6)	Package / Case: 8-PowerSMD, Flat Leads
AON7548	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH DFN 3X3	In Stock186 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1086pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 23W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x3)	Package / Case: 8-PowerVDFN
AOY516	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO251B	In Stock467 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 46A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251B	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
TPH3202PS	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 600V 9A TO220	In Stock282 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
TPH3202LD	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 600V 9A PQFN	In Stock598 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-PQFN (8x8)	Package / Case: 4-PowerDFN
TPH3206LD	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 600V 17A PQFN	In Stock483 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V	Vgs(th) (Max) @ Id: 2.6V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PQFN (8x8)	Package / Case: 4-PowerDFN
TPH3208LD	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 650V 20A PQFN	In Stock331 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V	Vgs(th) (Max) @ Id: 2.6V @ 300µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-PQFN (8x8)	Package / Case: 4-PowerDFN
TPH3202PD	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 600V 9A TO220	In Stock202 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
TPH3202LS	Transphorm	Transistors - FETs, MOSFETs - Single GANFET N-CH 600V 9A PQFN	In Stock523 More on Order	Manufacturer: Transphorm	Series: -	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±18V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PQFN (8x8)	Package / Case: 3-PowerDFN
64-0055PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-220AB	In Stock604 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V	FET Feature: -	Power Dissipation (Max): 230W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: -	Package / Case: -
AUXMOS20956STR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16SOIC	In Stock388 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AUXS20956S	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16SOIC	In Stock486 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFC3004EB	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH WAFER	In Stock607 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFC3006EB	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH WAFER	In Stock557 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFC3107EB	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH WAFER	In Stock341 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFC3205ZEB	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH WAFER	In Stock194 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -