FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 998/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PSMN5R6-100XS,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 61.8A TO220F	In Stock284 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack, Isolated Tab
PSMN7R0-100XS,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 55A TO220F	In Stock484 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6686pF @ 50V	FET Feature: -	Power Dissipation (Max): 57.7W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack, Isolated Tab
PSMN9R5-100XS,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 44.2A TO220F	In Stock505 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 44.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9.6mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 81.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4454pF @ 50V	FET Feature: -	Power Dissipation (Max): 52.6W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack, Isolated Tab
BUK7514-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 58A TO220AB	In Stock661 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 58A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK751R6-30E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A TO220AB	In Stock477 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK752R7-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB	In Stock308 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK753R5-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB	In Stock481 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V	FET Feature: -	Power Dissipation (Max): 293W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK754R7-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO220AB	In Stock216 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V	FET Feature: -	Power Dissipation (Max): 234W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK7E1R6-30E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A I2PAK	In Stock244 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E4R0-80E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A I2PAK	In Stock352 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12030pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9515-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 54A TO220AB	In Stock552 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK951R6-30E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A TO220AB	In Stock345 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK951R9-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB	In Stock495 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK952R3-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB	In Stock353 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V	FET Feature: -	Power Dissipation (Max): 293W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK952R8-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220AB	In Stock428 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK953R2-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB	In Stock272 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V	FET Feature: -	Power Dissipation (Max): 234W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK954R4-80E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A TO220AB	In Stock252 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK956R1-100E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220AB	In Stock136 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK958R5-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB	In Stock199 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK9E15-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 54A I2PAK	In Stock453 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E1R6-30E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A I2PAK	In Stock322 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E1R9-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V I2PAK	In Stock359 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E2R3-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A I2PAK	In Stock368 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V	FET Feature: -	Power Dissipation (Max): 293W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E2R8-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A I2PAK	In Stock376 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E3R2-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A I2PAK	In Stock580 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V	FET Feature: -	Power Dissipation (Max): 234W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E3R7-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A I2PAK	In Stock465 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V	FET Feature: -	Power Dissipation (Max): 293W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E4R4-80E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A I2PAK	In Stock460 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E4R9-60E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A I2PAK	In Stock552 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 25V	FET Feature: -	Power Dissipation (Max): 234W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E6R1-100E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A I2PAK	In Stock454 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V	FET Feature: -	Power Dissipation (Max): 349W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E8R5-40E,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A I2PAK	In Stock450 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): 96W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA