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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 28/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 3K |
In Stock592 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10 |
In Stock490 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10 |
In Stock247 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10 |
In Stock497 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock549 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 1kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.1W ES6 |
In Stock431 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W ES6 |
In Stock242 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock184 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock392 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock362 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock381 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock336 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock460 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock522 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock290 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock356 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms, 10kOhms |
Resistor - Emitter Base (R2): 47kOhms, 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock343 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms, 22kOhms |
Resistor - Emitter Base (R2): 22kOhms, 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock655 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms, 47kOhms |
Resistor - Emitter Base (R2): 10kOhms, 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock394 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms, 22kOhms |
Resistor - Emitter Base (R2): 22kOhms, 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock292 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock597 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 190MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock522 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: 2 PNP Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms, 10kOhms |
Resistor - Emitter Base (R2): 10kOhms, 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock257 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 170MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock389 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 170MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock526 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 170MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock481 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 170MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock542 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock321 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock434 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock257 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |