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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 29/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock391 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock221 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock248 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 100MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363 |
In Stock385 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 100MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock589 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 200MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock451 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 200MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock241 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 200MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock272 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 190MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock545 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock285 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 150MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock278 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 70mA, 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms, 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 100MHz, 200MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock502 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 70mA, 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms, 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 100MHz, 200MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS SOT363 |
In Stock415 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 130MHz |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 |
In Stock346 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.5W SOT563 |
In Stock422 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP |
In Stock310 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock261 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 20mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock216 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 2.2kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP |
In Stock651 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP |
In Stock243 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 20mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock487 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock612 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock625 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP |
In Stock347 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP |
In Stock354 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock561 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.339W SOT963 |
In Stock511 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 339mW |
Mounting Type: Surface Mount |
Package / Case: SOT-963 |
Supplier Device Package: SOT-963 |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 T&R 10 |
In Stock213 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN, PNP Complementary |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 270mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock539 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PREBIAS TRANSISTOR SOT363 |
In Stock554 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |