Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W UMT5 |
In Stock311 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: UMT5 |
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.15W UMT6 |
In Stock451 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA, 150mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 140MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock447 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock408 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock443 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock407 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock335 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock423 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock191 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock560 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock361 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock247 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock320 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 20mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock323 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock440 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock507 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock277 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock256 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock530 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 20mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100kOhms |
Resistor - Emitter Base (R2): 100kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock430 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock562 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock377 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock489 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock559 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock403 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock347 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock384 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT666 |
In Stock306 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SOT666 |
In Stock574 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 |
In Stock266 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-666 |