Bipolar (BJT) - Arrays, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
EMG2DXV5T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553	In Stock213 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: SOT-553	Supplier Device Package: SOT-553
EMG2DXV5T5	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553	In Stock466 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: SOT-553	Supplier Device Package: SOT-553
IMH20TR1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SC74R	In Stock271 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 15V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: 300mW	Mounting Type: Surface Mount	Package / Case: SOT-23-6 Thin, TSOT-23-6	Supplier Device Package: SC-74R
MUN5112DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock544 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5114DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock299 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5116DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock488 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5130DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock207 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1kOhms	Resistor - Emitter Base (R2): 1kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5131DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock530 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 2.2kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5134DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock351 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5135DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363	In Stock234 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5212DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock434 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5216DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock306 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5230DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock515 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1kOhms	Resistor - Emitter Base (R2): 1kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5231DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock396 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 2.2kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5232DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock534 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5233DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock389 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5234DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock357 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5234DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock302 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5235DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.25W SOT363	In Stock270 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5312DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock402 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5313DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock383 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5315DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock603 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5316DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock298 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5331DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock145 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2kOhms	Resistor - Emitter Base (R2): 2.2kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5332DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock406 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5332DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock222 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 4.7kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5333DW1T1	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock168 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
MUN5334DW1T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363	In Stock625 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
NSBA124EDXV6T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.5W SOT563	In Stock477 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22kOhms	Resistor - Emitter Base (R2): 22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NSBA143ZDXV6T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.5W SOT563	In Stock610 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: 2 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7kOhms	Resistor - Emitter Base (R2): 47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563