Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 70V 1.09GHZ 55AW |
In Stock331 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 70V |
Frequency - Transition: 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9.5dB |
Power - Max: 500W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V |
Current - Collector (Ic) (Max): 12A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55AW |
Supplier Device Package: 55AW |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 4GHZ TO39 |
In Stock359 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 4GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9dB ~ 10dB |
Power - Max: 2.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V |
Current - Collector (Ic) (Max): 150mA |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.15GHZ M115 |
In Stock240 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 7.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): 1A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M115 |
Supplier Device Package: M115 |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 24V 860MHZ 55FT |
In Stock273 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 24V |
Frequency - Transition: 470MHz ~ 860MHz |
Noise Figure (dB Typ @ f): - |
Gain: 11dB |
Power - Max: 8W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): 750mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis, Stud Mount |
Package / Case: 55FT |
Supplier Device Package: 55FT |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.09GHZ M115 |
In Stock365 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 1.09GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10.8dB |
Power - Max: 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V |
Current - Collector (Ic) (Max): 300mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M115 |
Supplier Device Package: M115 |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.09GHZ M220 |
In Stock510 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 1.09GHz |
Noise Figure (dB Typ @ f): - |
Gain: 10.8dB ~ 12.3dB |
Power - Max: 5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V |
Current - Collector (Ic) (Max): 300mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: M220 |
Supplier Device Package: M220 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 11GHZ 3SMINMOLD |
In Stock489 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 6V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 1.15dB @ 1GHz |
Gain: 13.5dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: 3-SuperMiniMold (30 PKG) |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 11GHZ SOT323 |
In Stock444 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 6V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 1.15dB @ 1GHz |
Gain: 13.5dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock393 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8.06dB ~ 8.45dB |
Power - Max: 115W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): - |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
|
|
M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V |
In Stock335 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 60V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8dB |
Power - Max: 11W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 1.3A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
|
|
M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock442 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 75W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 8.9A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
|
|
M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V |
In Stock376 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 60V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8dB |
Power - Max: 9W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 1.1A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SSM |
In Stock344 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 10GHz |
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz |
Gain: 1.4dB |
Power - Max: 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V |
Current - Collector (Ic) (Max): 15mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SSM |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USQ |
In Stock432 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1dB @ 500MHz |
Gain: 18dB |
Power - Max: 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: USQ |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM |
In Stock424 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1dB @ 500MHz |
Gain: - |
Power - Max: 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SSM |
|
|
NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT323-3 |
In Stock233 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 9GHz |
Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz |
Gain: - |
Power - Max: 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V |
Current - Collector (Ic) (Max): 120mA |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ SOT23-3 |
In Stock479 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 400MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
|
Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ TSLP-3 |
In Stock400 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4.7V |
Frequency - Transition: 45GHz |
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz |
Gain: 24dB |
Power - Max: 80mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-101, SOT-883 |
Supplier Device Package: PG-TSLP-3 |
|
|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 500MHZ TO39 |
In Stock446 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: 500MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V |
Current - Collector (Ic) (Max): 400mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: TO-39 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.7GHZ PCP |
In Stock609 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 6.7GHz |
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz |
Gain: 9dB |
Power - Max: 800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: PCP |
|
|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 500MHZ TO72 |
In Stock493 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: Military, MIL-PRF-19500/343 |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 500MHz |
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz |
Gain: 12.5dB ~ 21dB @ 450MHz |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V |
Current - Collector (Ic) (Max): 40mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-72-3 Metal Can |
Supplier Device Package: TO-72 |
|
|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ TO92 |
In Stock366 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
|
|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ SOT23 |
In Stock392 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 |
In Stock538 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 6.5GHz |
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz |
Gain: 10dB |
Power - Max: 1.2W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: SOT-89 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ SOT23 |
In Stock301 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 9GHz |
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz |
Gain: 13dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SOT23 |
In Stock515 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 10GHz |
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz |
Gain: 9dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V |
Current - Collector (Ic) (Max): 35mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ SOT143 |
In Stock215 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 9GHz |
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz |
Gain: 13.5dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-253-4, TO-253AA |
Supplier Device Package: SOT-143 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 4.5GHZ SOT323 |
In Stock666 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 4.5GHz |
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz |
Gain: 9dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ SOT323 |
In Stock333 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz |
Gain: 12dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ SOT323 |
In Stock436 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz |
Gain: 7.5dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V |
Current - Collector (Ic) (Max): 35mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |