Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

Page 37/51

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SD1444	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 512MHZ TO39	In Stock281 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 450MHz ~ 512MHz	Noise Figure (dB Typ @ f): -	Gain: 8dB	Power - Max: 5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N3866A	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ TO39	In Stock602 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 30V	Frequency - Transition: 400MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 1W	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N4427	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 500MHZ TO39	In Stock404 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 40V	Frequency - Transition: 500MHz	Noise Figure (dB Typ @ f): -	Gain: 10dB @ 175MHz	Power - Max: 1W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N5031	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 400MHZ TO72	In Stock504 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 400MHz	Noise Figure (dB Typ @ f): -	Gain: 12dB @ 400MHz	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-206AF, TO-72-4 Metal Can	Supplier Device Package: TO-72
2N5109	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.2GHZ TO39	In Stock384 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 1.2GHz	Noise Figure (dB Typ @ f): -	Gain: 12dB	Power - Max: 2.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N5179	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 200MHZ TO72	In Stock425 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 200MHz	Noise Figure (dB Typ @ f): 4.5dB @ 200MHz	Gain: 20dB	Power - Max: 300mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-206AF, TO-72-4 Metal Can	Supplier Device Package: TO-72
DME400A	Microsemi	Transistors - Bipolar (BJT) - RF TRANSISTOR BIPO 55AW-1	In Stock520 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: -	Voltage - Collector Emitter Breakdown (Max): -	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
DME500	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.15GHZ 55KT	In Stock238 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 6dB ~ 6.5dB	Power - Max: 1700W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V	Current - Collector (Ic) (Max): 40A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55KT	Supplier Device Package: 55KT
DME800	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ 55ST-1	In Stock581 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 9dB ~ 10dB	Power - Max: 2500W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V	Current - Collector (Ic) (Max): 50A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55ST-1	Supplier Device Package: 55ST-1
ITC1100	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55SW	In Stock613 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.03GHz	Noise Figure (dB Typ @ f): -	Gain: 10dB ~ 10.5dB	Power - Max: 3400W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V	Current - Collector (Ic) (Max): 80A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55SW	Supplier Device Package: 55SW
JTDB25	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW-1	In Stock569 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7.5dB	Power - Max: 97W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V	Current - Collector (Ic) (Max): 5A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55AW-1	Supplier Device Package: 55AW-1
JTDB75	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW	In Stock419 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7dB ~ 8.2dB	Power - Max: 220W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V	Current - Collector (Ic) (Max): 8A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55AW	Supplier Device Package: 55AW
MDS1100	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55TU-1	In Stock579 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.03GHz	Noise Figure (dB Typ @ f): -	Gain: 8.9dB	Power - Max: 8750W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V	Current - Collector (Ic) (Max): 100A	Operating Temperature: 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 55TU-1	Supplier Device Package: 55TU-1
MDS150	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.09GHZ 55AW	In Stock177 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 60V	Frequency - Transition: 1.03GHz ~ 1.09GHz	Noise Figure (dB Typ @ f): -	Gain: 10dB	Power - Max: 350W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V	Current - Collector (Ic) (Max): 4A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55AW	Supplier Device Package: 55AW
MS2202	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 1.15GHZ M115	In Stock325 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 3.5V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 9dB	Power - Max: 10W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V	Current - Collector (Ic) (Max): 250mA	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M115	Supplier Device Package: M115
MS2205	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 1.15GHZ M105	In Stock447 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 45V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 21.9W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V	Current - Collector (Ic) (Max): 1A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M105	Supplier Device Package: M105
MS2207	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M216	In Stock255 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.09GHz	Noise Figure (dB Typ @ f): -	Gain: 8dB	Power - Max: 880W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V	Current - Collector (Ic) (Max): 24A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M216	Supplier Device Package: M216
MS2209	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 225MHZ M218	In Stock451 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 225MHz	Noise Figure (dB Typ @ f): -	Gain: 8.4dB	Power - Max: 220W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V	Current - Collector (Ic) (Max): 7A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M218	Supplier Device Package: M218
MS2210	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216	In Stock564 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7dB	Power - Max: 940W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V	Current - Collector (Ic) (Max): 24A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M216	Supplier Device Package: M216
MS2211	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 48V 1.215GHZ M222	In Stock606 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 48V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 9.3dB	Power - Max: 25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 900mA	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M222	Supplier Device Package: M222
MS2212	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M222	In Stock429 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 8.1dB ~ 8.9dB	Power - Max: 50W	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V	Current - Collector (Ic) (Max): 1.8A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M222	Supplier Device Package: M222
MS2213	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M214	In Stock458 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7.8dB	Power - Max: 75W	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V	Current - Collector (Ic) (Max): 3.5A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M214	Supplier Device Package: M214
MS2214	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M218	In Stock368 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7.5dB	Power - Max: 300W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V	Current - Collector (Ic) (Max): 8A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M218	Supplier Device Package: M218
MS2215	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M216	In Stock613 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7.5dB	Power - Max: 300W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V	Current - Collector (Ic) (Max): 16.5A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M216	Supplier Device Package: M216
MS2267	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.215GHZ M214	In Stock248 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 60V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 8dB ~ 8.7dB	Power - Max: 575W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V	Current - Collector (Ic) (Max): 20A	Operating Temperature: 250°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M214	Supplier Device Package: M214
MS2272	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216	In Stock318 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 960MHz ~ 1.215GHz	Noise Figure (dB Typ @ f): -	Gain: 7.6dB	Power - Max: 940W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V	Current - Collector (Ic) (Max): 24A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M216	Supplier Device Package: M216
MS2321	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M105	In Stock286 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 10dB	Power - Max: 87.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): 1.5A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: M105	Supplier Device Package: M105
MS2322	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M115	In Stock212 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 65V	Frequency - Transition: 1.025GHz ~ 1.15GHz	Noise Figure (dB Typ @ f): -	Gain: 10dB	Power - Max: 87.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V	Current - Collector (Ic) (Max): 1.5A	Operating Temperature: -	Mounting Type: Chassis Mount	Package / Case: M115	Supplier Device Package: M115
2001	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 2GHZ 55BT	In Stock492 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 50V	Frequency - Transition: 2GHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V	Current - Collector (Ic) (Max): 250mA	Operating Temperature: -	Mounting Type: Chassis Mount	Package / Case: 55BT	Supplier Device Package: 55BT
2003	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 2GHZ 55BT-1	In Stock567 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 50V	Frequency - Transition: 2GHz	Noise Figure (dB Typ @ f): -	Gain: 8.5dB	Power - Max: 12W	DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 55BT-1	Supplier Device Package: 55BT-1

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