Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 25A 5PTAB |
In Stock8,022 More on Order |
|
Manufacturer: |
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A |
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V |
Power - Max: 6W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 5-LGA |
Supplier Device Package: 5-PTAB (5x3.5) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 4.3A 8-SOIC |
In Stock2,583 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8MLP |
In Stock4,511 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Powerclip-33 |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V 22-VSON-CLIP |
In Stock3,206 More on Order |
|
Manufacturer: |
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 22-PowerTFDFN |
Supplier Device Package: 22-VSON-CLIP (5x6) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 9.1A TO-220FP |
In Stock836 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 9.1A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V |
Power - Max: 21W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-5 Full Pack |
Supplier Device Package: TO-220-5 Full-Pak |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 10.6V 14SOIC |
In Stock1,751 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 14-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock1,004 More on Order |
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Manufacturer: Advanced Linear Devices Inc. |
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.9V |
Vgs(th) (Max) @ Id: 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8DIP |
In Stock621 More on Order |
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Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock536 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 810mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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EPC |
Transistors - FETs, MOSFETs - Arrays GANFET TRANS SYM HALF BRDG 80V |
In Stock7,778 More on Order |
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Manufacturer: EPC |
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 23A |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 60V 7A 15-SIP |
In Stock1,681 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: 4 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V |
Power - Max: 4.8W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock549 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8DIP |
In Stock581 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 60V 6A 12-SIP |
In Stock1,679 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock810 More on Order |
|
Manufacturer: Advanced Linear Devices Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 60V 10A 12-SIP |
In Stock2,386 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V |
Power - Max: 4W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 5P-CH 60V 5A 12-SIP |
In Stock1,721 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: 5 P-Channel, Common Source |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 60V 10A/6A 12SIP |
In Stock600 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A, 6A |
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 40V 150A MODULE |
In Stock602 More on Order |
|
Manufacturer: ON Semiconductor |
Series: SPM® |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 150A |
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 115W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 19-PowerDIP Module |
Supplier Device Package: Module |
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Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 0.41A 6DFN |
In Stock17,594 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 410mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V |
Power - Max: 285mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: DFN1010B-6 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.3A EMT5 |
In Stock14,970 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 300mA |
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 150mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: EMT5 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V/20V EMT6 |
In Stock42,479 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V, 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA |
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: EMT6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.35A SOT-563F |
In Stock4,029 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 350mA |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V |
Power - Max: 446mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563F |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT563 |
In Stock4,839 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 350mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 20V 4.7A 8SOP |
In Stock3,792 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) |
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V 6.5A 8TSSOP |
In Stock4,068 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) |
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V |
Power - Max: 1.04W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4A WSMINI8-F1-B |
In Stock24,570 More on Order |
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Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: WSMini8-F1-B |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 2-2Y1A |
In Stock3,832 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-UDFN (2x2) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V U-WLB1818-4 |
In Stock4,702 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.45W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 4-UFBGA, WLBGA |
Supplier Device Package: U-WLB1818-4 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays -30V PCH+PCH MIDDLE POWER MOSFET |
In Stock9,755 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: - |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-PowerUDFN |
Supplier Device Package: HUML2020L8 |