FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

Records 3,829

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMG6898LSDQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9.5A 8SO	In Stock4,411 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 9.5A	Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V	Power - Max: 1.28W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
TSM4946DCS RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 4.5A 8SOP	In Stock7,189 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V	Power - Max: 2.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
DMC4028SSD-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 8SOIC	In Stock3,404 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A	Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V	Power - Max: 1.8W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
SH8M3TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/4.5A SOP8	In Stock3,383 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A	Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V	Power - Max: 2W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
SI7972DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V POWERPAK SO8	In Stock15,745 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V	Power - Max: 22W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SO-8 Dual	Supplier Device Package: PowerPAK® SO-8 Dual
TSM4925DCS RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 30V 7.1A 8SOP	In Stock4,019 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)	Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
QS8M51TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 100V 2A/1.5A TSMT8	In Stock4,499 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A	Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V	Power - Max: 1.5W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: TSMT8
SIZ926DT-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 25V 8-POWERPAIR	In Stock4,023 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V	Power - Max: 20.2W, 40W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerWDFN	Supplier Device Package: 8-PowerPair® (6x5)
FC8V22040L	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 24V 8A WMINI8-F1	In Stock4,344 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 8A	Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1W	Operating Temperature: -40°C ~ 85°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: WMini8-F1
EPC2106ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GAN TRANS 2N-CH 100V BUMPED DIE	In Stock10,510 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 1.7A	Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 600µA	Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
EPC2110ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GAN TRANS 2N-CH 120V BUMPED DIE	In Stock15,570 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Dual) Common Source	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 120V	Current - Continuous Drain (Id) @ 25°C: 3.4A	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 700µA	Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
EPC2100ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GANFET 2 N-CH 30V 9.5A/38A DIE	In Stock4,499 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)	Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA	Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V	Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
EPC2102ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GANFET 2 N-CHANNEL 60V 23A DIE	In Stock9,106 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 23A (Tj)	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 7mA	Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
EPC2101ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID	In Stock6,029 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 2mA	Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
SLA5068-LF830	Sanken	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 60V 7A 15-SIP	In Stock1,674 More on Order	Manufacturer: Sanken	Series: -	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7A	Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V	Power - Max: 5W	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: 15-SIP Exposed Tab, Formed Leads	Supplier Device Package: 15-ZIP
SMA5132	Sanken	Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 500V 1.5A 12-SIP	In Stock445 More on Order	Manufacturer: Sanken	Series: -	FET Type: 3 N and 3 P-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 1.5A	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: 12-SIP	Supplier Device Package: 12-SIP
SLA5201	Sanken	Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 600V 7A 15-SIP	In Stock504 More on Order	Manufacturer: Sanken	Series: -	FET Type: 3 N and 3 P-Channel (3-Phase Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: 15-SIP Exposed Tab, Formed Leads	Supplier Device Package: 15-ZIP
DMN53D0LDW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.36A SOT363	In Stock39,897 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 360mA	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V	Power - Max: 310mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SSM6N16FE,L3F	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS	In Stock12,361 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V	Power - Max: 150mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
SSM6N44FU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS	In Stock4,955 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V	Power - Max: 200mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
DMN601DWKQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N-CHAN 41V 60V SOT363	In Stock7,265 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	Power - Max: 200mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SSM6P15FU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS	In Stock8,140 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.7V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V	Power - Max: 200mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
NVJD5121NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.295A SC88	In Stock14,859 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 295mA	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SC-88/SC70-6/SOT-363
SSM6N35AFE,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA ES6	In Stock5,278 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V	Power - Max: 250mW	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
SSM6P35AFE,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CH X 2 VDS	In Stock13,697 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVII	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V	Power - Max: 150mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
2N7002KDWA-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL MOSFET EFFECT,SOT-363	In Stock38,275 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 340mA	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V	Power - Max: 150mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SSM6N16FUTE85LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.1A US6	In Stock3,904 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V	Power - Max: 200mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
SSM6N17FU(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 SMALL LOW RON DUAL NCH MOSFE	In Stock4,905 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V	Power - Max: 200mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
SI3439KDW-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N AND P-CHANNEL MOSFETSOT-363	In Stock46,036 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA	Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 120pF, 113pF @ 16V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
SIX3439K-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N/P-CHANNELMOSFETSOT-563	In Stock49,853 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA	Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 120pF, 170pF @ 16V	Power - Max: -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563