FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CSD86356Q5D	Texas Instruments	Transistors - FETs, MOSFETs - Arrays 25V POWERBLOCK N CH MOSFET	In Stock296 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Logic Level Gate, 5V Drive	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V	Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V	Power - Max: 12W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerTDFN	Supplier Device Package: 8-VSON-CLIP (5x6)
CSD87355Q5D	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8LSON	In Stock630 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 1.9V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V	Power - Max: 12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerLDFN	Supplier Device Package: 8-LSON (5x6)
CSD87350Q5D	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 40A 8LSON	In Stock547 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 8V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 15V	Power - Max: 12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerLDFN	Supplier Device Package: 8-LSON (5x6)
SI7212DN-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 1212-8	In Stock490 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A	Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.3W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® 1212-8 Dual	Supplier Device Package: PowerPAK® 1212-8 Dual
CSD86360Q5D	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 50A 8SON	In Stock419 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5	Power - Max: 13W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerLDFN	Supplier Device Package: 8-LSON (5x6)
SQJQ904E-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8	In Stock515 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V	Power - Max: 75W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® 8 x 8 Dual	Supplier Device Package: PowerPAK® 8 x 8 Dual
FDMD8240L	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 23A	In Stock416 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 23A	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V	Power - Max: 2.1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 12-PowerWDFN	Supplier Device Package: 12-Power3.3x5
FDMQ8403	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 3.1A 12-MLP	In Stock267 More on Order	Manufacturer: ON Semiconductor	Series: GreenBridge™ PowerTrench®	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 3.1A	Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V	Power - Max: 1.9W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 12-WDFN Exposed Pad	Supplier Device Package: 12-MLP (5x4.5)
SQUN702E-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N&P-CH COMMON DRAIN	In Stock253 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N and P-Channel, Common Drain	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V, 200V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)	Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC, 14nC, 30.2nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1474pF, 1450pF, 1302pF @ 20V, 100V	Power - Max: 48W (Tc), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount, Wettable Flank	Package / Case: Die	Supplier Device Package: Die
FDMD8240LET40	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 24A POWER3.3X5	In Stock420 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 24A	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V	Power - Max: 50W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 12-PowerWDFN	Supplier Device Package: 12-Power3.3x5
FDMD8280	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 11A 6-MLP	In Stock191 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 11A	Rds On (Max) @ Id, Vgs: 8.2mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 40V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 12-PowerWDFN	Supplier Device Package: 12-Power3.3x5
FDMS8090	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 10A PWR56	In Stock545 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A	Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V	Power - Max: 2.2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerWDFN	Supplier Device Package: 8-MLP (5x6), Power56
FDMD85100	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V	In Stock458 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10.4A	Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V	Power - Max: 2.2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerWDFN	Supplier Device Package: 8-Power 5x6
SI7956DP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 2.6A PPAK SO-8	In Stock600 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 2.6A	Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SO-8 Dual	Supplier Device Package: PowerPAK® SO-8 Dual
SQ3585EV-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6TSOP	In Stock448 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)	Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.67W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-23-6 Thin, TSOT-23-6	Supplier Device Package: 6-TSOP
CSD88584Q5DC	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V 22-VSON-CLIP	In Stock373 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V	Power - Max: 12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 22-PowerTFDFN	Supplier Device Package: 22-VSON-CLIP (5x6)
CSD88599Q5DC	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP	In Stock364 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V	Power - Max: 12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 22-PowerTFDFN	Supplier Device Package: 22-VSON-CLIP (5x6)
CSD88599Q5DCT	Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP	In Stock598 More on Order	Manufacturer:	Series: NexFET™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V	Power - Max: 12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 22-PowerTFDFN	Supplier Device Package: 22-VSON-CLIP (5x6)
EPC2104ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GANFET 2NCH 100V 23A DIE	In Stock1,439 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 23A	Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 5.5mA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
TC1550TG-G	Microchip Technology	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 500V 8SOIC	In Stock576 More on Order	Manufacturer: Microchip Technology	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V	Power - Max: -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
EPC2105ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GANFET 2NCH 80V 9.5A DIE	In Stock360 More on Order	Manufacturer: EPC	Series: eGaN®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 9.5A	Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
TPD3215M	Transphorm	Transistors - FETs, MOSFETs - Arrays GANFET 2N-CH 600V 70A MODULE	In Stock578 More on Order	Manufacturer: Transphorm	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 70A (Tc)	Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V	Power - Max: 470W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: Module	Supplier Device Package: Module
APTM100H45SCTG	Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP4	In Stock382 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 7®	FET Type: 4 N-Channel (H-Bridge)	FET Feature: Standard	Drain to Source Voltage (Vdss): 1000V (1kV)	Current - Continuous Drain (Id) @ 25°C: 18A	Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V	Power - Max: 357W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: SP4	Supplier Device Package: SP4
AAT7347IAS-T1	Skyworks Solutions	Transistors - FETs, MOSFETs - Arrays MOSFET 8SOP	In Stock21,914 More on Order	Manufacturer: Skyworks Solutions Inc.	Series: -	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: -	Supplier Device Package: 8-SOP
IRF7504TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.7A MICRO8	In Stock149 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.7A	Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V	Power - Max: 1.25W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Supplier Device Package: Micro8™
IRF7316GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC	In Stock276 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A	Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7506TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 1.7A MICRO8	In Stock468 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.7A	Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V	Power - Max: 1.25W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Supplier Device Package: Micro8™
IRF7104TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.3A 8-SOIC	In Stock293 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.3A	Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7313TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC	In Stock495 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A	Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7309TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC	In Stock492 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A, 3A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO