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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 41/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays SYNCHRONOUS BUCK NEXFET POWER BL |
In Stock1,088 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V |
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V |
Power - Max: 6W |
Operating Temperature: -55°C ~ 125°C |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-VSON (3.3x3.3) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays SYNCHRONOUS BUCK NEXFET POWER BL |
In Stock1,182 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 40A (Ta) |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V |
Power - Max: 12W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-VSON-CLIP (5x6) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 50A |
In Stock519 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tj) |
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) |
Vgs(th) (Max) @ Id: 5.55V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V |
Power - Max: 20mW (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY1BM-2 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 50A |
In Stock564 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tj) |
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) |
Vgs(th) (Max) @ Id: 5.55V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V |
Power - Max: 20mW (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY1BM-2 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 150A |
In Stock470 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 150A (Tj) |
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ) |
Vgs(th) (Max) @ Id: 5.55V @ 60mA |
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V |
Power - Max: 20mW (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY2BM-2 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 200A |
In Stock631 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 200A (Tj) |
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V |
Vgs(th) (Max) @ Id: 5.55V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V |
Power - Max: 20mW (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: AG-EASY2BM-2 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays HALF BRIDGE MODULE CONSISTING OF |
In Stock355 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C: 250A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4V @ 66mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V |
Power - Max: 1800W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3A 8-SOIC |
In Stock450 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A |
In Stock395 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V |
Power - Max: 350mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A UMT6 |
In Stock314 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 0.9V Drive |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V |
Power - Max: 120mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: UMT6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.8A POWERDI |
In Stock369 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.8A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3030-8 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.3A 6UDFN |
In Stock508 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V |
Power - Max: 730mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT-563 |
In Stock223 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 150mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.5A TSST8 |
In Stock144 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A |
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: 8-TSST |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.6A 8SO |
In Stock450 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V |
Power - Max: 1.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V SSOT-6 |
In Stock265 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA |
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: SuperSOT™-6 |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 11.6A/9A 6TDFN |
In Stock530 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V |
Power - Max: 6.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VDFN Exposed Pad |
Supplier Device Package: 6-TDFN (2x2) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8.1A/7A 8SOP |
In Stock210 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A |
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CHA 30V 1.1A DFN1310 |
In Stock504 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA |
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V |
Power - Max: 390mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: X2-DFN1310-6 (Type B) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.63A TSOT26 |
In Stock249 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 630mA |
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V |
Power - Max: 820mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: TSOT-26 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.9A 8TSSOP |
In Stock197 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) |
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V |
Power - Max: 870mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 24V 11A SOT28 |
In Stock628 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: SOT-28FL/ECH8 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A UDFN2020-6 |
In Stock407 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8.5A/7A 8SO |
In Stock342 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.9A SSOT6 |
In Stock395 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.9A |
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: SuperSOT™-6 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 1.5A SC-75-6 |
In Stock512 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SC-75-6L Dual |
Supplier Device Package: PowerPAK® SC-75-6L Dual |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 1.3A TUMT6 |
In Stock481 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 1.3A |
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V |
Power - Max: 320mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: TUMT6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V SSOT6 |
In Stock382 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V |
Power - Max: 700mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: SuperSOT™-6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 6A SO-8 |
In Stock465 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 6A 8SOP |
In Stock250 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V |
Power - Max: 1.6W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |