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FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 40/128
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
ALD1105SBL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N/2P-CH 10.6V 14SOIC

In Stock704

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Manufacturer: Advanced Linear Devices Inc.
Series: -
FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
ZXMC4559DN8TA
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 60V 8SOIC

In Stock1,458

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
ALD1117SAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 10.6V 8SOIC

In Stock494

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Manufacturer: Advanced Linear Devices Inc.
Series: -
FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
ALD1116PAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8DIP

In Stock623

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Manufacturer: Advanced Linear Devices Inc.
Series: -
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
ALD114904SAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8SOIC

In Stock595

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
Vgs(th) (Max) @ Id: 360mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
ALD114913SAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8SOIC

In Stock720

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
ALD110900PAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8DIP

In Stock453

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
ALD110814SCL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 10.6V 16SOIC

In Stock463

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®
FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
ALD210800SCL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 10.6V 0.08A 16SOIC

In Stock331

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25Ohm
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
ALD110900ASAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8SOIC

In Stock361

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
ALD1102SAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 10.6V 8SOIC

In Stock302

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Manufacturer: Advanced Linear Devices Inc.
Series: -
FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
ALD1103SBL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N/2P-CH 10.6V 14SOIC

In Stock631

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Manufacturer: Advanced Linear Devices Inc.
Series: -
FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
ALD210800ASCL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 10.6V 0.08A 16SOIC

In Stock597

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25Ohm
Vgs(th) (Max) @ Id: 10mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
ALD110900APAL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 10.6V 8DIP

In Stock478

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
ALD110800APCL
Advanced Linear Devices Inc.

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 10.6V 16DIP

In Stock636

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Manufacturer: Advanced Linear Devices Inc.
Series: EPAD®, Zero Threshold™
FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP
SLA5075
Sanken

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 500V 5A 15-SIP

In Stock282

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Manufacturer: Sanken
Series: -
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP Exposed Tab, Formed Leads
Supplier Device Package: 15-ZIP
FF23MR12W1M1B11BOMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 1200V 50A MODULE

In Stock405

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Manufacturer: Infineon Technologies
Series: CoolSiC™+
FET Type: 2 N-Channel (Dual)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
BSM180D12P2C101
Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 180A MODULE

In Stock536

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Power - Max: 1130W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module
CSD87501LT
Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 10PICOSTAR

In Stock1,157

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Manufacturer:
Series: NexFET™
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Supplier Device Package: 10-Picostar (3.37x1.47)
CSD87384MT
Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 30A 5PTAB

In Stock773

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Manufacturer:
Series: NexFET™
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (5x3.5)
SLA5212
Sanken

Transistors - FETs, MOSFETs - Arrays

MOSFET 3N/3P-CH 35V 8A 15-SIP

In Stock403

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Manufacturer: Sanken
Series: -
FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 15-SIP Exposed Tab, Formed Leads
Supplier Device Package: 15-ZIP
SMA5133
Sanken

Transistors - FETs, MOSFETs - Arrays

MOSFET 3N/3P-CH 500V 2.5A 12-SIP

In Stock740

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Manufacturer: Sanken
Series: -
FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP
SMA5117
Sanken

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 250V 7A 12-SIP

In Stock487

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Manufacturer: Sanken
Series: -
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP
APTM50H14FT3G
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 500V 26A SP3

In Stock324

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Manufacturer: Microsemi Corporation
Series: -
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
APTC60DSKM24T3G
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 600V 95A SP3

In Stock395

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
APTM50HM65FT3G
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 500V 51A SP3

In Stock327

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Manufacturer: Microsemi Corporation
Series: -
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
APTM50HM75STG
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 500V 46A SP4

In Stock535

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Manufacturer: Microsemi Corporation
Series: -
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
APTM100H45STG
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 1000V 18A SP4

In Stock419

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Manufacturer: Microsemi Corporation
Series: -
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
APTM50AM38STG
Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 500V 90A SP4

In Stock536

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Manufacturer: Microsemi Corporation
Series: -
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
ZXMC3F31DN8TA
Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

In Stock1,511

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO