FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPC60R520E6UNSAWNX6SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH BARE DIE	In Stock225 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPC60R600E6UNSAWNX6SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH BARE DIE	In Stock443 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPC60R950C6UNSAWNX6SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH BARE DIE	In Stock511 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPS50R520CPAKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7.1A TO251-3	In Stock428 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V	FET Feature: -	Power Dissipation (Max): 66W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO251-3	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IPS70R2K0CEE8211	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock383 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SPW20N60C3E8177FKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock470 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SS05N70AKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock399 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SS07N70AKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock390 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SPD04N60C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.5A TO252-3	In Stock469 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SPD07N60C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7.3A TO252-3	In Stock309 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 350µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPI90R800C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.9A TO262-3	In Stock558 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 460µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPP90R500C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A TO220-3	In Stock217 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 740µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V	FET Feature: -	Power Dissipation (Max): 156W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
SPI08N80C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 8A TO262-3	In Stock581 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 470µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
SPS03N60C3	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.2A TO251-3	In Stock212 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 135µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO251-3	Package / Case: TO-251-3 Stub Leads, IPak
SI4712DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.6A 8SOIC	In Stock474 More on Order	Manufacturer: Vishay Siliconix	Series: SkyFET®, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
DMS3016SFG-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A PWRDI3333-8	In Stock134 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 11.2A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1886pF @ 15V	FET Feature: Schottky Diode (Body)	Power Dissipation (Max): 980mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
PMPB100ENEAX	Nexperia	Transistors - FETs, MOSFETs - Single PMPB100ENEA/SOT1220/SOT1220	In Stock483 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
PMPB16XNEAX	Nexperia	Transistors - FETs, MOSFETs - Single PMPB16XNEA/SOT1220/SOT1220	In Stock373 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
PMPB25ENEAX	Nexperia	Transistors - FETs, MOSFETs - Single PMPB25ENEA/SOT1220/SOT1220	In Stock569 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 607pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.08W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
PMPB50ENEAX	Nexperia	Transistors - FETs, MOSFETs - Single PMPB50ENEA/SOT1220/SOT1220	In Stock427 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 43mOhm @ 5.1A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
APT130SM70B	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V TO247	In Stock620 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 700V	FET Feature: -	Power Dissipation (Max): 556W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
APT130SM70J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V SOT227	In Stock407 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 78A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 700V	FET Feature: -	Power Dissipation (Max): 273W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
APT35SM70B	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V TO247	In Stock388 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 700V	FET Feature: -	Power Dissipation (Max): 176W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
APT35SM70S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V D3PAK	In Stock659 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: -	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 35A	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
APT5SM170B	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V TO247	In Stock444 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 1700V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 20V	Vgs(th) (Max) @ Id: 3.2V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 1000V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
APT5SM170S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V D3PAK	In Stock168 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 1700V	Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V	Vgs(th) (Max) @ Id: 3.2V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 1000V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
FDBL86063_F085	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TRENCH PTNG 100V	In Stock580 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 240A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 50V	FET Feature: -	Power Dissipation (Max): 357W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HPSOF	Package / Case: 8-PowerSFN
FDWS9508L_F085	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH PWR TRENCH PT8-40V	In Stock163 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 20V	FET Feature: -	Power Dissipation (Max): 214W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PQFN (5x6)	Package / Case: 8-PowerTDFN
NTH027N65S3F_F155	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 27 MOHM TO247 P	In Stock389 More on Order	Manufacturer: ON Semiconductor	Series: FRFET®, SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 5V @ 7.5mA	Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 400V	FET Feature: -	Power Dissipation (Max): 595W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
NVD4810NT4G-TB01	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A DPAK	In Stock411 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 11.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63