FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 973/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AON7400AL_103	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V DFN	In Stock145 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x3)	Package / Case: 8-SMD, Flat Lead
AOI4TL60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO251A	In Stock287 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AOT12N60_001	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220	In Stock513 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
AOT12N65_001	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220	In Stock318 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
AOTF8T50P_001	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220	In Stock229 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 810mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 100V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack
MT8386M5	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V	In Stock183 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
MCB60I1200TZ	IXYS	Transistors - FETs, MOSFETs - Single 1200V 90A SIC POWER MOSFET	In Stock267 More on Order	Manufacturer: IXYS	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SPD50P03LGXT	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A TO-252	In Stock368 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS®-P	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6880pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-5	Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
IPI045N10N3GXK	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO262-3	In Stock651 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™ 3	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 137A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V	FET Feature: -	Power Dissipation (Max): 214W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPP023NE7N3G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO220	In Stock653 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™ 3	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 273µA	Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
SPP04N80C3XK	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4A TO-220AB	In Stock439 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 240µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
SPP06N80C3XK	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6A TO-220AB	In Stock544 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
SPP08N80C3XK	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 8A TO-220AB	In Stock398 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 470µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
SPP80N06S08NK	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A TO-220	In Stock470 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 240µA	Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
IPW65R045C7300XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247-3	In Stock193 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ C7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 46A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 1.25mA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4.34nF @ 400V	FET Feature: -	Power Dissipation (Max): 227W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247	Package / Case: TO-247-3
PMV48XP/MIR	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V SOT23	In Stock385 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V	Vgs(th) (Max) @ Id: 1.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1nF @ 10V	FET Feature: -	Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
PMV65XP/MIR	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V SOT23	In Stock552 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 744pF @ 20V	FET Feature: -	Power Dissipation (Max): 480mW (Ta), 4.17W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
RJK0353DPA-WS#J0B	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock379 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V	FET Feature: -	Power Dissipation (Max): 40W (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: WPAK(3F) (5x6)	Package / Case: 8-PowerVDFN
FDC642P-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single PMOS SSOT6 20V 65 MOHM	In Stock374 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSOT-23-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
FDD4243-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single PMOS DPAK 40V 44 MOHM	In Stock461 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8444-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single NMOS DPAK 40V 5.2 MOHM	In Stock331 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 25V	FET Feature: -	Power Dissipation (Max): 153W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8445-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single NMOS DPAK 40V 8.7 MOHM	In Stock398 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V	FET Feature: -	Power Dissipation (Max): 79W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDS8449-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single NMOS SO8 40V 29 MOHM	In Stock275 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V	FET Feature: -	Power Dissipation (Max): 5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FQB34P10TM-F085P	ON Semiconductor	Transistors - FETs, MOSFETs - Single PMOS D2PAK 100V 60 MOHM	In Stock596 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.75W (Ta), 155W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
JANSF2N7383	Microsemi	Transistors - FETs, MOSFETs - Single P CHANNEL MOSFET TO-257	In Stock371 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
JANSR2N7261U	Microsemi	Transistors - FETs, MOSFETs - Single N CHANNEL MOSFET LCC-18	In Stock494 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/601	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 12V	Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 12V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C	Mounting Type: Surface Mount	Supplier Device Package: 18-ULCC (9.14x7.49)	Package / Case: 18-CLCC
JANSR2N7262U	Microsemi	Transistors - FETs, MOSFETs - Single N CHANNEL MOSFET LCC-18	In Stock460 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/601	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 12V	Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 12V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C	Mounting Type: Surface Mount	Supplier Device Package: 18-ULCC (9.14x7.49)	Package / Case: 18-CLCC
JANSR2N7268U	Microsemi	Transistors - FETs, MOSFETs - Single N CHANNEL MOSFET SMD-1	In Stock271 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/603	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 12V	Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 12V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C	Mounting Type: Surface Mount	Supplier Device Package: U1 (SMD-1)	Package / Case: 3-SMD, No Lead
JANSR2N7269	Microsemi	Transistors - FETs, MOSFETs - Single N CHANNEL MOSFET TO-254	In Stock273 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/603	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 12V	Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 12V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C	Mounting Type: Through Hole	Supplier Device Package: TO-254AA	Package / Case: TO-254-3, TO-254AA (Straight Leads)
JANSR2N7269U	Microsemi	Transistors - FETs, MOSFETs - Single N CHANNEL MOSFET SMD-1	In Stock270 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/603	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 12V	Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 12V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C	Mounting Type: Surface Mount	Supplier Device Package: U1 (SMD-1)	Package / Case: 3-SMD, No Lead