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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 974/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
JANSR2N7380
Microsemi

Transistors - FETs, MOSFETs - Single

N CHANNEL MOSFET TO-257 RAD
In Stock488

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/614
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 12V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 2W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3
JANSR2N7381
Microsemi

Transistors - FETs, MOSFETs - Single

N CHANNEL MOSFET TO-257 RAD
In Stock158

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/614
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 490mOhm @ 9.4A, 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 12V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 2W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3
JANSR2N7389
Microsemi

Transistors - FETs, MOSFETs - Single

P CHANNEL MOSFET TO-39
In Stock489

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/630
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 12V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AF Metal Can
JANSR2N7389U
Microsemi

Transistors - FETs, MOSFETs - Single

P CHANNEL MOSFET LCC-18
In Stock452

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Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/630
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 12V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
DMP2036UVT-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V TSOT26
In Stock372

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Manufacturer: Diodes Incorporated
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP2040UVT-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V TSOT26
In Stock525

More on Order
Manufacturer: Diodes Incorporated
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP2040UVT-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V TSOT26
In Stock316

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Manufacturer: Diodes Incorporated
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP2110U-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V SOT23-3
In Stock499

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP2541UCB9-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 9UWLB
In Stock265

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs (Max): -6V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
FET Feature: -
Power Dissipation (Max): 940mW (Ta)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-WLB1515-9
Package / Case: 9-UFBGA, WLBGA
DMP3013SFK-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V DFN2523-6
In Stock313

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Manufacturer: Diodes Incorporated
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP3056LVT-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V TSOT-26
In Stock696

More on Order
Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.38W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP3056LVT-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V TSOT-26
In Stock500

More on Order
Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.38W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Supplier Device Package: -
Package / Case: -
DMP2035UVT-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V TSOT26
In Stock539

More on Order
Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6
IPB65R190C7ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-3
In Stock384

More on Order
Manufacturer: Infineon Technologies
Series: CoolMOS™ C7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
FET Feature: -
Power Dissipation (Max): 72W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CMPDM202PH BK
Central Semiconductor Corp

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V SOT-23F
In Stock581

More on Order
Manufacturer: Central Semiconductor Corp
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.2A, 5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
CMPDM203NH BK
Central Semiconductor Corp

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V SOT-23F
In Stock592

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Manufacturer: Central Semiconductor Corp
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
CMPDM302PH BK
Central Semiconductor Corp

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V SOT-23F
In Stock247

More on Order
Manufacturer: Central Semiconductor Corp
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
CMPDM303NH BK
Central Semiconductor Corp

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SOT-23F
In Stock215

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Manufacturer: Central Semiconductor Corp
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
IPI072N10N3GXK
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 80A TO262-3
In Stock239

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Manufacturer: Infineon Technologies
Series: OptiMOS™ 3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
NVB25P06T4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 27.5A D2PAK
In Stock321

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
FET Feature: -
Power Dissipation (Max): 120W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVD4806NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 76A DPAK
In Stock261

More on Order
Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5490NLT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 17A DPAK
In Stock519

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.4W (Ta), 49W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5890NLT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 123A DPAK
In Stock349

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVD6820NLT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 90V 50A DPAK
In Stock467

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4209pF @ 25V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVF2201NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.3A SC70
In Stock396

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Manufacturer: ON Semiconductor
Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3 (SOT323)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
DMG4407SSS-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 9.9A 8-SO
In Stock412

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.45W (Ta)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
DMS2085LSD-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.3A
In Stock245

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
IXTY1R4N60P TRL
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 1.4A D-PAK
In Stock455

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Manufacturer: IXYS
Series: Polar™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTD1R4N60P 11
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V
In Stock267

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Manufacturer: IXYS
Series: PolarHV™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
T-TD1R4N60P 11
IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V
In Stock575

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Manufacturer: IXYS
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -