FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 984/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
UPA2396T1P-E1-A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock275 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2706GR-E1-A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock278 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2714GR(0)-E1-A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock430 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2752GR(1)-E1-A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock267 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2752GR-E1-AT	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock344 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2754GR(0)-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock370 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2770GR(0)-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock172 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2782GR-E1-A	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock344 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2792GR(0)-E1-AZ	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock536 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2793GR(0)-E2-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock424 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2793GR(01)-E2-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock372 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
UPA2794GR(0)-E1-AZ	Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR	In Stock292 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
CTLDM7002A-M621 BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN6	In Stock239 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V	Vgs (Max): 40V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM7002A-M621 TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN6	In Stock499 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V	Vgs (Max): 40V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM7003-M621 BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock442 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.764nC @ 4.5V	Vgs (Max): 12V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM7003-M621 TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock598 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.764nC @ 4.5V	Vgs (Max): 12V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM7120-M621H BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V DFN6	In Stock341 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621H	Package / Case: 6-XFDFN Exposed Pad
CTLDM8002A-M621 BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock168 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM8002A-M621 TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock219 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621	Package / Case: 6-PowerVFDFN
CTLDM8002A-M621H BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock381 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621H	Package / Case: 6-XFDFN Exposed Pad
CTLDM8002A-M621H TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6	In Stock420 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621H	Package / Case: 6-XFDFN Exposed Pad
CTLDM8120-M621H BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V DFN6	In Stock520 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621H	Package / Case: 6-XFDFN Exposed Pad
CTLDM8120-M621H TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V DFN6	In Stock287 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TLM621H	Package / Case: 6-XFDFN Exposed Pad
TSM1NB60SCT A3	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO92	In Stock631 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TSM4425CS RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 8SOP	In Stock303 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 8V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
TSM1NB60SCT B0	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 500MA TO92	In Stock333 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
TSM8N70CI C0	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V ITO220	In Stock324 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ITO-220AB	Package / Case: TO-220-3 Full Pack, Isolated Tab
CZDM1003N BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3A SOT-223	In Stock607 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
SIA430DJ-T4-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V SC-70-6	In Stock273 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6
SIA444DJT-T4-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V SMD	In Stock466 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 17mOhm @ 7.4A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 19W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6

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