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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 987/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RJK2555DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock415

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 104mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK2557DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock402

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 128mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK4006DPD-WS#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock376

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK4532DPD-E0#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock499

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
FET Feature: -
Power Dissipation (Max): 40.3W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5006DPD-WS#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock487

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5030DPD-01#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock371

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
FET Feature: -
Power Dissipation (Max): 41.7W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5030DPD-02#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock439

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
FET Feature: -
Power Dissipation (Max): 41.7W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5031DPD-01#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock369

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
FET Feature: -
Power Dissipation (Max): 40.3W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6002DPD-WS#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH MP3A
In Stock600

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6013DPE-WS#J3
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LDPAK
In Stock180

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 4-LDPAK
Package / Case: SC-83
RJL6013DPE-WS#J3
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LDPAK
In Stock205

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 4-LDPAK
Package / Case: SC-83
RQA0002DNSTB-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH HWSON2
In Stock545

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 2-HWSON (5x4)
Package / Case: 3-DFN Exposed Pad
RQA0004PXDQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH UPAK
In Stock344

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 3W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RQA0005QXDQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH UPAK
In Stock311

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 9W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RQA0009SXAQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH UPAK
In Stock573

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RQA0009TXDQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH UPAK
In Stock242

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RQA0011DNS#G0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH HWSON2
In Stock619

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 2-HWSON (5x4)
Package / Case: 3-DFN Exposed Pad
RQHC6140-6DWA#W0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH
In Stock468

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
RQJ0305EQDQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH UPAK
In Stock319

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Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs (Max): +8V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RQK0609CQDQS#H1
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH UPAK
In Stock531

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UPAK
Package / Case: TO-243AA
RS44CA09TQKA
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH
In Stock500

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
UPA1912TE(0)-T1-AT
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SC-95
In Stock504

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Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SC-95
Package / Case: SC-95
IPP90R1K0C3XK
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V TO-220
In Stock474

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Manufacturer: Infineon Technologies
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
FET Feature: -
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3
FDN337N-F169
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V SSOT3
In Stock211

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
FDN360P-NBGT003B
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V SSOT3
In Stock478

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Manufacturer: ON Semiconductor
Series: PowerTrench®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 298pF @ 15V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
NDS355AN-F169
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MSOFET N-CH SMD
In Stock297

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
NDS355AN-NB9L007A
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MSOFET N-CH SMD
In Stock528

More on Order
Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
NDS356AP-NB8L005A
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MSOFET N-CH SMD
In Stock416

More on Order
Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
2N7002-7-F-79
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SOT23-3
In Stock209

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Manufacturer: Diodes Incorporated
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
2N7002-7-G
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SOT23-3
In Stock406

More on Order
Manufacturer: Diodes Incorporated
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -