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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 986/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD06P003NATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRENCH 40<-<100V
In Stock222

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P004NATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRENCH 40<-<100V
In Stock259

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005LATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRENCH 40<-<100V
In Stock466

More on Order
Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005NATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRENCH 40<-<100V
In Stock176

More on Order
Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P007NATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

TRENCH 40<-<100V
In Stock500

More on Order
Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
FET Feature: -
Power Dissipation (Max): 19W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDV304P-CGB8
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL
In Stock343

More on Order
Manufacturer: ON Semiconductor
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
2SJ690-T1B-AT
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V TSMT
In Stock551

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Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SC-96-3, Thin Mini Mold
Package / Case: SC-96
2SK3408-T1B-AT
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

TRANS N-CH CMPAK-4
In Stock315

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 43V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 195mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SC-96-3, Thin Mini Mold
Package / Case: SC-96
H5N2007LSTL-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH HS SW TO-263
In Stock345

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
H5N2307LSTL-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH HS SW TO-263
In Stock558

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
HAT1047RWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SOP8
In Stock628

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 10V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
HAT1069C-EL-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SMD
In Stock425

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Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 52mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 10V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-CMFPAK
Package / Case: 6-SMD, Flat Leads
HAT1127HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SOP8
In Stock206

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 10V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2033RWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH SOP8
In Stock282

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
HAT2165HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5
In Stock369

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2166HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5
In Stock631

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2168HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5
In Stock282

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2170HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5
In Stock387

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 10V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2173HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5
In Stock195

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2185WPWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-PAK WPAK
In Stock345

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
HAT2256RWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-PAK 8SOP
In Stock537

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 10V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
HAT2266HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-PAK 8SOP
In Stock361

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
FET Feature: -
Power Dissipation (Max): 23W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
HAT2279HWS-E
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-PAK 8SOP
In Stock136

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
RJJ0318DSP-WS#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8SOP
In Stock192

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Manufacturer: Renesas Electronics America
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 2W
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
RJK0301DPB-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A 5-LFPAK
In Stock228

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
RJK0305DPB-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A 5-LFPAK
In Stock275

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-LFPAK
Package / Case: SC-100, SOT-669
RJK1555DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock623

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK1557DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock612

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK2055DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock325

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK2057DPA-WS#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH W-PAK
In Stock149

More on Order
Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN