IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single

Records 3,305

Page 88/111

Part Number	Manufacturer	Description	In Stock	Series	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
STGB18N40LZ-1	STMicroelectronics	Transistors - IGBTs - Single IGBT 420V 30A 150W I2PAK	In Stock359 More on Order	Manufacturer: STMicroelectronics	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 420V	Current - Collector (Ic) (Max): 30A	Current - Collector Pulsed (Icm): 40A	Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A	Power - Max: 150W	Switching Energy: -	Input Type: Logic	Gate Charge: 29nC	Td (on/off) @ 25°C: 650ns/13.5µs	Test Condition: 300V, 10A, 5V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package: I2PAK (TO-262)
STGW45NC60WD	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 90A 285W TO247	In Stock611 More on Order	Manufacturer: STMicroelectronics	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 90A	Current - Collector Pulsed (Icm): 230A	Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A	Power - Max: 285W	Switching Energy: 302µJ (on), 349µJ (off)	Input Type: Standard	Gate Charge: 126nC	Td (on/off) @ 25°C: 33ns/168ns	Test Condition: 390V, 30A, 10Ohm, 15V	Reverse Recovery Time (trr): 45ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247 Long Leads
FGA50N100BNTTU	ON Semiconductor	Transistors - IGBTs - Single IGBT 1000V 50A 156W TO3P	In Stock457 More on Order	Manufacturer: ON Semiconductor	Series: -	IGBT Type: NPT and Trench	Voltage - Collector Emitter Breakdown (Max): 1000V	Current - Collector (Ic) (Max): 50A	Current - Collector Pulsed (Icm): 200A	Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A	Power - Max: 156W	Switching Energy: -	Input Type: Standard	Gate Charge: 257nC	Td (on/off) @ 25°C: 34ns/243ns	Test Condition: 600V, 60A, 10Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-3P-3, SC-65-3	Supplier Device Package: TO-3P
GT10G131(TE12L,Q)	Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 400V 1W 8-SOIC	In Stock531 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 400V	Current - Collector (Ic) (Max): -	Current - Collector Pulsed (Icm): 200A	Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A	Power - Max: 1W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 3.1µs/2µs	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
GT10J312(Q)	Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 600V 10A 60W TO220SM	In Stock486 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 10A	Current - Collector Pulsed (Icm): 20A	Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A	Power - Max: 60W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 400ns/400ns	Test Condition: 300V, 10A, 100Ohm, 15V	Reverse Recovery Time (trr): 200ns	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package: TO-220SM
GT60N321(Q)	Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 1000V 60A 170W TO3P LH	In Stock557 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 1000V	Current - Collector (Ic) (Max): 60A	Current - Collector Pulsed (Icm): 120A	Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A	Power - Max: 170W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 330ns/700ns	Test Condition: -	Reverse Recovery Time (trr): 2.5µs	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-3PL	Supplier Device Package: TO-3P(LH)
GT8G133(TE12L,Q)	Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 400V 600MW 8TSSOP	In Stock444 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 400V	Current - Collector (Ic) (Max): -	Current - Collector Pulsed (Icm): 150A	Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A	Power - Max: 600mW	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 1.7µs/2µs	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
GT50J121(Q)	Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 600V 50A 240W TO3P LH	In Stock172 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 50A	Current - Collector Pulsed (Icm): 100A	Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A	Power - Max: 240W	Switching Energy: 1.3mJ (on), 1.34mJ (off)	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 90ns/300ns	Test Condition: 300V, 50A, 13Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-3PL	Supplier Device Package: TO-3P(LH)
STGF14N60D	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 11A 33W TO220FP	In Stock447 More on Order	Manufacturer: STMicroelectronics	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 11A	Current - Collector Pulsed (Icm): 50A	Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A	Power - Max: 33W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: -	Test Condition: 390V, 7A, 10Ohm, 15V	Reverse Recovery Time (trr): 37ns	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220FP
STGP14N60D	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 25A 95W TO220	In Stock671 More on Order	Manufacturer: STMicroelectronics	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 25A	Current - Collector Pulsed (Icm): 50A	Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A	Power - Max: 95W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: -	Test Condition: 390V, 7A, 10Ohm, 15V	Reverse Recovery Time (trr): 37ns	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220-3
STGDL6NC60DIT4	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 13A 50W DPAK	In Stock374 More on Order	Manufacturer: STMicroelectronics	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 13A	Current - Collector Pulsed (Icm): 18A	Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A	Power - Max: 50W	Switching Energy: 32µJ (on), 24µJ (off)	Input Type: Standard	Gate Charge: 12nC	Td (on/off) @ 25°C: 6.7ns/46ns	Test Condition: 390V, 3A, 10Ohm, 15V	Reverse Recovery Time (trr): 23ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package: DPAK
IRG6I330U-110P	Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP	In Stock157 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 330V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A	Power - Max: 43W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 39ns/120ns	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRG6I330U-111P	Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP	In Stock314 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 330V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A	Power - Max: 43W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: 39ns/120ns	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRG6I330U-168P	Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP	In Stock445 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 330V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A	Power - Max: 43W	Switching Energy: -	Input Type: Standard	Gate Charge: -	Td (on/off) @ 25°C: -	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRG4PC50FD-EPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 70A 200W TO247AD	In Stock350 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 70A	Current - Collector Pulsed (Icm): 280A	Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A	Power - Max: 200W	Switching Energy: 1.5mJ (on), 2.4mJ (off)	Input Type: Standard	Gate Charge: 190nC	Td (on/off) @ 25°C: 55ns/240ns	Test Condition: 480V, 39A, 5Ohm, 15V	Reverse Recovery Time (trr): 50ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IRG4PH50S-EPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 57A 200W TO247AD	In Stock269 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 57A	Current - Collector Pulsed (Icm): 114A	Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A	Power - Max: 200W	Switching Energy: 1.8mJ (on), 19.6mJ (off)	Input Type: Standard	Gate Charge: 167nC	Td (on/off) @ 25°C: 32ns/845ns	Test Condition: 960V, 33A, 5Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD
IRG6I320UPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 24A 39W TO220ABFP	In Stock190 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 330V	Current - Collector (Ic) (Max): 24A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A	Power - Max: 39W	Switching Energy: -	Input Type: Standard	Gate Charge: 46nC	Td (on/off) @ 25°C: 24ns/89ns	Test Condition: 196V, 12A, 10Ohm	Reverse Recovery Time (trr): -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRG6I330UPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP	In Stock238 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 330V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A	Power - Max: 43W	Switching Energy: -	Input Type: Standard	Gate Charge: 86nC	Td (on/off) @ 25°C: 39ns/120ns	Test Condition: 196V, 25A, 10Ohm	Reverse Recovery Time (trr): -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220AB Full-Pak
IRG7PH42UD-EP	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 320W TO247AD	In Stock318 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 85A	Current - Collector Pulsed (Icm): 90A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A	Power - Max: 320W	Switching Energy: 2.11mJ (on), 1.18mJ (off)	Input Type: Standard	Gate Charge: 157nC	Td (on/off) @ 25°C: 25ns/229ns	Test Condition: 600V, 30A, 10Ohm, 15V	Reverse Recovery Time (trr): 153ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD
IRG7PH42U-EP	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 385W TO247AD	In Stock587 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 90A	Current - Collector Pulsed (Icm): 90A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A	Power - Max: 385W	Switching Energy: 2.11mJ (on), 1.18mJ (off)	Input Type: Standard	Gate Charge: 157nC	Td (on/off) @ 25°C: 25ns/229ns	Test Condition: 600V, 30A, 10Ohm, 15V	Reverse Recovery Time (trr): 153ns	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD
IRG7PH42UPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 385W TO247AC	In Stock381 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 90A	Current - Collector Pulsed (Icm): 90A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A	Power - Max: 385W	Switching Energy: 2.11mJ (on), 1.18mJ (off)	Input Type: Standard	Gate Charge: 157nC	Td (on/off) @ 25°C: 25ns/229ns	Test Condition: 600V, 30A, 10Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IRGI4045DPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 33W TO220ABFP	In Stock321 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 11A	Current - Collector Pulsed (Icm): 18A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A	Power - Max: 33W	Switching Energy: 64µJ (on), 123µJ (off)	Input Type: Standard	Gate Charge: 13nC	Td (on/off) @ 25°C: 26ns/73ns	Test Condition: 400V, 6A, 47Ohm, 15V	Reverse Recovery Time (trr): 73ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220AB Full-Pak
IRGI4060DPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 14A 37W TO220ABFP	In Stock308 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 14A	Current - Collector Pulsed (Icm): 23A	Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 7.5A	Power - Max: 37W	Switching Energy: 47µJ (on), 141µJ (off)	Input Type: Standard	Gate Charge: 19nC	Td (on/off) @ 25°C: 29ns/101ns	Test Condition: 400V, 7.5A, 47Ohm, 15V	Reverse Recovery Time (trr): 73ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220AB Full-Pak
IRGI4090PBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 300V 21A 34W TO220ABFP	In Stock387 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 300V	Current - Collector (Ic) (Max): 21A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.94V @ 15V, 30A	Power - Max: 34W	Switching Energy: -	Input Type: Standard	Gate Charge: 34nC	Td (on/off) @ 25°C: 20ns/99ns	Test Condition: 240V, 11A, 10Ohm	Reverse Recovery Time (trr): -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220AB Full-Pak
IRGP4072DPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 300V 70A 180W TO247AC	In Stock347 More on Order	Manufacturer: Infineon Technologies	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 300V	Current - Collector (Ic) (Max): 70A	Current - Collector Pulsed (Icm): 120A	Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A	Power - Max: 180W	Switching Energy: 409µJ (on), 838µJ (off)	Input Type: Standard	Gate Charge: 73nC	Td (on/off) @ 25°C: 18ns/144ns	Test Condition: 240V, 40A, 10Ohm, 15V	Reverse Recovery Time (trr): 122ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IXGA120N30TC	IXYS	Transistors - IGBTs - Single IGBT 300V 120A 250W TO263AA	In Stock610 More on Order	Manufacturer: IXYS	Series: -	IGBT Type: Trench	Voltage - Collector Emitter Breakdown (Max): 300V	Current - Collector (Ic) (Max): 120A	Current - Collector Pulsed (Icm): 200A	Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A	Power - Max: 250W	Switching Energy: -	Input Type: Standard	Gate Charge: 134nC	Td (on/off) @ 25°C: -	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: TO-263 (IXGA)
IXGA12N100	IXYS	Transistors - IGBTs - Single IGBT 1000V 24A 100W TO263AA	In Stock512 More on Order	Manufacturer: IXYS	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 1000V	Current - Collector (Ic) (Max): 24A	Current - Collector Pulsed (Icm): 48A	Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A	Power - Max: 100W	Switching Energy: 2.5mJ (off)	Input Type: Standard	Gate Charge: 65nC	Td (on/off) @ 25°C: 100ns/850ns	Test Condition: 800V, 12A, 120Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: TO-263 (IXGA)
IXGA12N60B	IXYS	Transistors - IGBTs - Single IGBT 600V 24A 100W TO263AA	In Stock396 More on Order	Manufacturer: IXYS	Series: HiPerFAST™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 24A	Current - Collector Pulsed (Icm): 48A	Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A	Power - Max: 100W	Switching Energy: 500µJ (off)	Input Type: Standard	Gate Charge: 32nC	Td (on/off) @ 25°C: 20ns/150ns	Test Condition: 480V, 12A, 18Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: TO-263 (IXGA)
IXGA12N60BD1	IXYS	Transistors - IGBTs - Single IGBT 600V 24A 100W TO263AA	In Stock409 More on Order	Manufacturer: IXYS	Series: HiPerFAST™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 24A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A	Power - Max: 100W	Switching Energy: 500µJ (off)	Input Type: Standard	Gate Charge: 32nC	Td (on/off) @ 25°C: 20ns/150ns	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: TO-263 (IXGA)
IXGA12N60C	IXYS	Transistors - IGBTs - Single IGBT 600V 24A 100W TO263AA	In Stock402 More on Order	Manufacturer: IXYS	Series: HiPerFAST™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 24A	Current - Collector Pulsed (Icm): 48A	Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A	Power - Max: 100W	Switching Energy: 90µJ (off)	Input Type: Standard	Gate Charge: 32nC	Td (on/off) @ 25°C: 20ns/60ns	Test Condition: 480V, 12A, 18Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: TO-263 (IXGA)