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Records 64,903

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Part Number	Description	In Stock
MRF544 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 70V 1.5GHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.5GHz Gain: 13.5dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Mounting Type: Through Hole Package / Case: TO-39 Supplier Device Package: TO-39	In Stock619 More on Order
MRF545 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 70V 1.4GHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1GHz ~ 1.4GHz Gain: 14dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock525 More on Order
MRF553 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 175MHZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA	In Stock687 More on Order
MRF553G Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Gain: 11dB ~ 13dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	In Stock323 More on Order
MRF553GT Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	In Stock504 More on Order
MRF553T Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	In Stock513 More on Order
MRF555 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V POWER MACRO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Gain: 11dB ~ 13dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	In Stock518 More on Order
MRF555G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 470MHZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA	In Stock396 More on Order
MRF555GT Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 470MHZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA	In Stock409 More on Order
MRF555T Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V POWER MACRO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Gain: 11dB ~ 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	In Stock272 More on Order
MRF559 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ MACRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	In Stock147 More on Order
MRF559G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ MICRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	In Stock326 More on Order
MRF559GT Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA	In Stock436 More on Order
MRF559T Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA	In Stock253 More on Order
MRF581 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 5GHZ MICRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	In Stock263 More on Order
MRF5812 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SOIC Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock511 More on Order
MRF5812G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock255 More on Order
MRF5812GR1 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock274 More on Order
MRF5812GR2 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock520 More on Order
MRF5812M Microsemi	Transistors - Bipolar (BJT) - RF TRANS NPN 15V 200MA Manufacturer: Microsemi Corporation	In Stock225 More on Order
MRF5812MR1 Microsemi	Transistors - Bipolar (BJT) - RF TRANS NPN 15V 200MA Manufacturer: Microsemi Corporation	In Stock522 More on Order
MRF5812MR2 Microsemi	Transistors - Bipolar (BJT) - RF TRANS NPN 15V 200MA Manufacturer: Microsemi Corporation	In Stock535 More on Order
MRF5812R1 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock520 More on Order
MRF581A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ MICRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	In Stock479 More on Order
MRF581AG Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ MACRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	In Stock523 More on Order
MRF581G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 5GHZ MICRO X Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	In Stock341 More on Order
MRF586 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 17V 3GHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock429 More on Order
MRF586G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 17V 3GHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock456 More on Order
MRF8372 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock318 More on Order
MRF8372G Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock481 More on Order