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Records 64,903

Page 138/2164

Part Number	Description	In Stock
MS2214 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock368 More on Order
MS2215 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 16.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock613 More on Order
MS2225H Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock413 More on Order
MS2226H Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock337 More on Order
MS2228 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M214 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Gain: 9dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 5.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	In Stock475 More on Order
MS2244 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock377 More on Order
MS2248 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock362 More on Order
MS2266 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock316 More on Order
MS2267 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.215GHZ M214 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 8dB ~ 8.7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	In Stock248 More on Order
MS2272 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7.6dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock318 More on Order
MS2279 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock399 More on Order
MS2284 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock386 More on Order
MS2321 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M105 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 10dB Power - Max: 87.5W Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	In Stock286 More on Order
MS2321A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock137 More on Order
MS2322 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1.5A Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock212 More on Order
MS2341 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 9dB Power - Max: 87.5W Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock398 More on Order
MS2348 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock370 More on Order
MS2356A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock339 More on Order
MS2361 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 9dB Power - Max: 87.5W Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock610 More on Order
MS2392 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock217 More on Order
MS2393 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M138 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	In Stock519 More on Order
MS2396 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock358 More on Order
MS2421 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M103 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M103 Supplier Device Package: M103	In Stock634 More on Order
MS2422 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M138 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	In Stock181 More on Order
MS2441 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M112 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	In Stock371 More on Order
MS2472 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.15GHZ M112 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 5.6dB Power - Max: 1350W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	In Stock401 More on Order
MS2473 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M112 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	In Stock393 More on Order
MS2473A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock213 More on Order
MS2477 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock326 More on Order
MS2502A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock510 More on Order

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