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Records 64,903

Page 137/2164

Part Number	Description	In Stock
MS1337 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 175MHZ M113 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	In Stock637 More on Order
MS1402 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 512MHZ M122 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M122 Supplier Device Package: M122	In Stock533 More on Order
MS1406 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 35V 175MHZ M135 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Gain: 8.2dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	In Stock569 More on Order
MS1409 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 175MHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 175MHz Gain: 10dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock271 More on Order
MS1509 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 33V 500MHZ M168 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 500MHz Gain: 5.5dBi Power - Max: 260W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M168 Supplier Device Package: M168	In Stock574 More on Order
MS1512 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 860MHZ M122 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 860MHz Gain: 10dB Power - Max: 19.4W Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	In Stock336 More on Order
MS1579 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 860MHZ M156 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Gain: 8.5dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V Current - Collector (Ic) (Max): 5.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M156 Supplier Device Package: M156	In Stock481 More on Order
MS1582 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 860MHZ M173 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 470MHz ~ 860MHz Gain: 9dB Power - Max: 135W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M173 Supplier Device Package: M173	In Stock540 More on Order
MS1612 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock345 More on Order
MS1649 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 470MHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Gain: 9.5dB Power - Max: 7.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock470 More on Order
MS1701 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock527 More on Order
MS1801 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock465 More on Order
MS2091H Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock297 More on Order
MS2092H Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock574 More on Order
MS2200 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 500MHZ M102 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 400MHz ~ 500MHz Gain: 9.7dB Power - Max: 1167W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 43.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M102 Supplier Device Package: M102	In Stock367 More on Order
MS2200A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock349 More on Order
MS2201 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 1.15GHZ M220 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	In Stock556 More on Order
MS2202 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 1.15GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock325 More on Order
MS2203 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.09GHZ M220 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	In Stock510 More on Order
MS2204 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.09GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Gain: 10.8dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock365 More on Order
MS2205 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 1.15GHZ M105 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 9.5dB Power - Max: 21.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	In Stock447 More on Order
MS2206 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.15GHZ M115 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 10dB Power - Max: 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	In Stock240 More on Order
MS2206A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock608 More on Order
MS2207 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.09GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock255 More on Order
MS2209 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 225MHZ M218 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 225MHz Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	In Stock451 More on Order
MS2210 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ M216 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	In Stock564 More on Order
MS2210A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock328 More on Order
MS2211 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 48V 1.215GHZ M222 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 48V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 9.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 900mA Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	In Stock606 More on Order
MS2212 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M222 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 8.1dB ~ 8.9dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 1.8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	In Stock429 More on Order
MS2213 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ M214 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7.8dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 3.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	In Stock458 More on Order

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